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Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
We firstly briefly summarize some of the most relevant recent results and open questions across rather complex electronic phase diagram of cuprates. We continue with a discussion of results on thin superconducting oxide films grown by laser ablation. Syste ...
Zircaloy-4 has been oxidised in environmental scanning electron microscope (ESEM), at a temperature of 700 °C and the surface of the material has been observed during the oxidation, directly in the ESEM. The material has been subsequently analysed by atomi ...
Goal of the Study: to achieve comparable reliability and reproducibility of the thermistor characteristics with LTCC as with standard alumina substrates. ...
Novel efficient structured combustion catalysts based on sintered metal fiber filters (MFF) were developed. To increase sp. surface area (SSA), metal fibers were coated by crack-free porous oxide films of SiO2, Al2O3, porous glass, and mesoporous SBA-15 si ...
In this paper, the resistive and piezoresistive properties of a commercial resistive composition (Du Pont 2041), often used for strain-gauge applications, are examined on several dielectric compositions, which themselves are deposited onto various ceramic ...
Properties of ultra-thin films are different from their single crystal counterparts due to the presence of (substrate induced) strain, different degree and type of (growth induced) disorder and different average doping (distribution of oxygen vacancies, fo ...
Uniaxial fragmentation tests were carried out in situ in a scanning electron microscope (SEM) on 10-nm-thick silicon oxide coatings deposited by plasma enhanced chemical vapor deposition on poly(ethylene terephthalate). In order to prevent charging effects ...
Titanium oxide films were prepd. by reactive DC magnetron sputtering onto SnO2:F coated glass substrates. The O2/Ar gas flow ratio was kept at a const. value Γ during the deposition, and a series of films were deposited with 0.050
Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 Angstrom down to the atomic sc ...