Concept
Threshold voltage
Personnes associées (74)
Mihai Adrian Ionescu
D'origine et de nationalités roumaine et suisse, Mihai-Adrian Ionescu est né en 1965. Après le doctorat en Physique des Composants à Semiconducteurs de lInstitut National Polytechnique de Grenoble, M. Ionescu a travaillé comme chercheur post-doctoral au LETI-CEA Grenoble, sur la caractérisation des diélectriques low-k pour les technologies submicroniques CMOS. Après une courte période au sein du CNRS, comme chargé de recherche 1ere Classe il a effectué un séjour post-doctoral au Center for Integrated Systems, Stanford University, USA. Actuellement il est Professeur Nanoélectronique à lEcole Polytechnique Fédérale de Lausanne.
Farzan Jazaeri
Farzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.
Christian Enz
Christian C. Enz (M84, S'12) received the M.S. and Ph.D. degrees in Electrical Engineering from the EPFL in 1984 and 1989 respectively. From 1984 to 1989 he was research assistant at the EPFL, working in the field of micro-power analog IC design. In 1989 he was one of the founders of Smart Silicon Systems S.A. (S3), where he developed several low-noise and low-power ICs, mainly for high energy physics applications. From 1992 to 1997, he was an Assistant Professor at EPFL, working in the field of low-power analog CMOS and BiCMOS IC design and device modeling. From 1997 to 1999, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for the design of RF CMOS circuits. In 1999, he joined the Swiss Center for Electronics and Microtechnology (CSEM) where he launched and lead the RF and Analog IC Design group. In 2000, he was promoted Vice President, heading the Microelectronics Department, which became the Integrated and Wireless Systems Division in 2009. He joined the EPFL as full professor in 2013, where he is currently the director of the Institute of Microengineering (IMT) and head of the Integrated Circuits Laboratory (ICLAB).He is lecturing and supervising undergraduate and graduate students in the field of Analog and RF IC Design at EPFL. His technical interests and expertise are in the field of very low-power analog and RF IC design, semiconductor device modeling, and inexact and error tolerant circuits and systems.He has published more than 200 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. Together with E. Vittoz and F. Krummenacher he is one of the developer of the EKV MOS transistor model and the author of the book "Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design" (Wiley, 2006). He has been member of several technical program committees, including the International Solid-State Circuits Conference (ISSCC) and European Solid-State Circuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 International Symposium on Low Power Electronics and Design (ISLPED), exhibit chair for the 2000 International Symposium on Circuits and Systems (ISCAS) and chair of the technical program committee for the 2006 European Solid-State Circuits Conference (ESSCIRC). Since 2012 he has been elected as member of the IEEE Solid-State Circuits Society (SSCS) Administrative Commmittee (AdCom). He is also Chair of the IEEE SSCS Chapter of Switzerland.
Nicolas Grandjean
Nicolas Grandjean received a PhD degree in physics from the University ofNice Sophia Antipolis in 1994 and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL) where he created the Laboratory for advanced semiconductors for photonics and electronics. He was promoted to full professor in 2009. He was the director of the Institute of Condensed Matter Physics from 2012 to 2016 and then moved to the University of California at Santa Barbara where he spent 6 months as a visiting professor. Since 2018, he is the head of the School of Physics at the EPFL. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, the "Quantum Devices Award” at the 2017 Compound Semiconductor Week, and “2016 best teacher” award from the EPFL Physics School. His research interests are focused on the physics of nanostructures and III-V nitride semiconductor quantum photonics.
Marc Ilegems
Marc Ilegems obtained degrees in Electrical Engineering from the University of Brussels in 1965 and a doctorate in Electrical Engineering from Stanford University in 1970. From 1969 to 1977 he was a Member of Technical Staff at the Solid State Electronics Research Laboratory, Bell Laboratories, Murray Hill. He joined the Ecole Polytechnique Federale (Swiss Federal Institute of Technology) in Lausanne in October 1977 as Professor and Director of the new Interdepartmental Institute of Microelectronics (1977-1983) and subsequently as Director of the Institute of Micro- and Optoelectronics (1983-2000) and of the Semiconductor Device Physics Laboratory (1983-2005).
Prof. Ilegems served as Dean of the Department of Physics from 1998 to 2000, and as Director of the Swiss National Centre of Competence in Research (NCCR) in Quantum Photonics (2001-2005), the Swiss Priority Program OPTICS (1993-1999) and the Swiss National Program on Micro- and Optoelectronics (1983-90). He is a member of the Scientific Council and has acted as expert and consultant for several national and European research organizations.
His current activities include technical and patent consulting for private organizations, contributions to the definition and management of research programs in the framework of bilateral collaborations between Poland, Hungary and Switzerland (2011-2017), and participation as member of various ICT and FET review panels within the Horizon 2020 programme.
Prof. Ilegems received an honorary doctorate from the University of Toulouse (1998) and the Heinrich Welker Award from the Compound Semiconductor Symposium (2006) for his contributions to III-V semiconductor materials and device research.
The research activities of the Semiconductor Device Physics Laboratory centred on the physics and technology of semiconductor devices. The main subjects of interest included quantum photonics (semiconductor microcavities, light emitting diodes, lasers and detectors), wide bandgap semiconductor nitrides, physics of nano and low-dimensional structures, high electron mobility transistors, crystal growth and materials technology. The research programs were carried out in close collaboration with numerous academic and industrial groups in Switzerland and abroad, in particular within the framework of programs of the European Community.
Earlier research topics pursued at Bell Laboratories and at EPFL include Molecular Beam Epitaxy and doping of GaAs and AlGaAs thin films with applications to heterostructure lasers, detectors, and Bragg mirrors, hydride vapor phase epitaxy and physical characterization of GaN on sapphire, liquid-solid phase diagrams of ternary III-V compound systems, and silicon-based non-volatile memory cells.
Prof. Ilegems is the author or co-author of over 250 scientific publications (citation index h = 48) and 7 book chapters, and has supervised over 30 doctoral students in Lausanne. His academic contacts include stays as invited professor at Stanford University (1994) and at the Polytechnic University of Madrid (2007).
Links:
- NCCR Quantum Photonics - http://nccr-qp.epfl.ch/