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In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...
A path-integral approach is developed for the analysis of spike-triggered-average quantities in neurons with voltage-gated subthreshold currents. Using a linearization procedure to reduce the models to the generalized integrate-and-fire form, analytical ex ...
The field of invention is in the area of MOS integrated circuits operating with very low currents in the weak inversion region or sub threshold. The method aims at providing linear resistor with a value in the multi-mega ohm range. In order to produce Sili ...
This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: one in terms of gate voltage, ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
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Organic FET transistors (OFETs) were fabricated on silicon substrates using pentacene as active organic layer and gold source and drain contacts. OFETs were used as test structures in order to study carriers photogeneration effect in organic layers. Photog ...
The performance and charge transport characteristics of pentacene transistors with oxide gates such as SiO2 and Al2O3 have been recently shown to largely depend on the density of residual carriers due to electron acceptor defects at the oxide surface. The ...
We perform broadband spin-wave spectroscopy on thin submicrometer-wide Ni80Fe20 magnetic wires. Intentionally, we apply the in-plane magnetic field under an angle that is a few degrees off with respect to the in-plane hard-axis direction. In an intermediat ...
A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...
After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...