Concept

Effet Hall

Publications associées (286)

Temperature Influence Investigation on Hall Effect Sensors Performance Using a Lumped Circuit Model

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated c ...

IEEE2012

A Fully Integrated Hall Sensor Microsystem for Contactless Current Measurement

Maher Kayal, Marc Pastre, Andrea Ajbl

Contactless current measurement based on Hall-effect sensors can be performed in either closed-or open-loop configuration. In this paper an open-loop sensor system with a current-mode output is described. The system measures the magnetic field induced arou ...

Ieee2012

High-speed CMOS magnetic angle sensor based on miniaturized circular vertical Hall devices

Radivoje Popovic, Mirjana Banjevic

We present a high-speed CMOS integrated magnetic angle sensor consisting of two 8-contact circular vertical Hall devices (CVHD). The biasing and sensing of the Hall voltage is rotated clockwise for the first device, and counter clockwise for the second one ...

2012

Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

Rosendo Sanjines, David Oezer

The electrical and optical properties of TaxSiyNz thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correla ...

Amer Inst Physics2012

A Hall sensor microsystem with continuous gain calibration using fully integrated references

Maher Kayal, Marc Pastre, Andrea Ajbl

This paper presents an integrated Hall sensor microsystem with continuous gain calibration and a current-mode back-end. The integrated system includes a Hall sensor with internal biasing, a fully differential front-end, a preamplifier chain, a voltage-to-c ...

IEEE2012

Single crystal study of the heavy-fermion antiferromagnet CePt2In7

Philip Johannes Walter Moll

We report the synthesis, structure, and physical properties of single crystals of CePt2In7. Single crystal x-ray diffraction analysis confirms the tetragonal I4/mmm structure of CePt2In7 with unit cell parameters a = 4.5886(6) Å, c = 21.530(6) Å and V = 45 ...

2012

Modeling and Design Techniques for 3-D ICs under Process, Voltage, and Temperature Variations

Hu Xu

Three-dimensional (3-D) integration is a promising solution to further enhance the density and performance of modern integrated circuits (ICs). In 3-D ICs, multiple dies (tiers or planes) are vertically stacked. These dies can be designed and fabricated se ...

EPFL2012

Electric field effect in graphite crystallites

Klaus Kern, Marko Burghard, Kannan Balasubramanian, Adarsh Singh Sagar

Graphite is a highly anisotropic crystal with a quasi-two-dimensional electronic structure exhibiting high intrinsic charge carrier mobility. Here, we investigate the effect of an electric field on the resistance of individual graphite crystallites with a ...

2012

Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs

Philippe Buffat, Benjamin Dwir, Elena Suvorova Buffat

Metamorphic InxAl1-xAs buffer design influence on electrophysical and structural properties of the MHEMT nanoheterostructures was investigated. Electrophysical properties of the nanoheterostructures were characterized by Hall measurements, while the struc ...

2012

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET). We find that the internal voltage amplification peaks of ...

American Institute of Physics2012

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