Concept

Intel 80186

Publications associées (7)

Shrinking FPGA Static Power via Machine Learning-Based Power Gating and Enhanced Routing

Mirjana Stojilovic, Hossein Asadi, Zeinab Seifoori

Despite FPGAs rapidly evolving to support the requirements of the most demanding emerging applications, their high static power consumption, concentrated within the routing resources, still presents a major hurdle for low-power applications. Augmenting the ...

2021

Side-channel attacks on SIKE

Natacha Yolande Emmanuel Marie Linard de Guertechin

This thesis presents, firstly, an introduction to the current state of the art in isogeny-based cryptography, and secondly, a side-channel differential power analysis of SIKE—an isogeny-based key exchange algorithm—in semi-static mode. These attacks have b ...

2020

Key-Value (K-V) stores are an integral building block in modern datacenter applications. With byteaddressable persistent memory (PM) technologies, such as Intel/Micron's 3D XPoint, on the horizon, there has been an influx of new high performance K-V stores ...

USENIX ASSOC2018

Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized ...

Elsevier2015

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Journal article A sub-mW pulse-based 5-bit flash ADC with a time-domain fully-digital reference ladder: A Katic, Nikola; Cojbasic, Radisav; Schmid, Alexandre; Leblebici, Yusuf Published in: Microelectronics Journal (ISSN: 0026-2692), vol. 46, num. 12, ...

Elsevier2015

In the past, tantalum oxide devices have been used to create non-volatile digital memories, whilst neglecting the analogue memristive characteristics of such devices. In this Letter, it is shown that these devices can provide a low-cost, low-power solution ...

Institution of Engineering and Technology2012

Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

Matthieu Despeisse, François Eric Powolny

Radiation detectors based on the deposition of a 10 to 30 μm thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time i ...

2008

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