Concept

STMicroelectronics

Publications associées (28)

Integration of MEMS in Silicon Photonics

Like integrated electronics, integrated photonics such as Silicon Photonics benefit from increased device-density on a single chip. Silicon is an excellent material for integrated photonics because its high refractive index allows devices to be made small, ...

EPFL2021

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Tobias Kippenberg, Rui Ning Wang, Guanhao Huang, Junqiu Liu, Arslan Sajid Raja, Jijun He, Nils Johan Engelsen, Tianyi Liu

Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with est ...

NATURE RESEARCH2021

Implantable aptamer–field-effect transistor neuroprobes for in vivo neurotransmitter monitoring

Nako Nakatsuka

While tools for monitoring in vivo electrophysiology have been extensively developed, neurochemical recording technologies remain limited. Nevertheless, chemical communication via neurotransmitters plays central roles in brain information processing. We de ...

2021

Improvements on the uniformity of large-area microlens arrays in Fused Silica

Toralf Scharf, Wilfried Noell, Raoul Kirner, Jeremy Béguelin

The uniformity of large microlens arrays in Fused Silica is governed by the production process. It comprises photolithographic patterning of a spin-coated layer of photoresist on a 200mm wafer with a molten resist reflow process and subsequent dry etching. ...

OPTICAL SOC AMER2019

Fast Low-Complexity Decoders for Low-Rate Polar Codes

Alexios Konstantinos Balatsoukas Stimming, Pascal Giard

Polar codes are capacity-achieving error-correcting codes with an explicit construction that can be decoded with low-complexity algorithms. In this work, we show how the state-of-the-art low-complexity decoding algorithm can be improved to better accommoda ...

2018

645 V Quasi-Vertical GaN Power Transistors on silicon substrates

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 pm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 ...

IEEE2018

Cryogenic Fab-on-a-Chip Sticks the Landing

Matthias Imboden, Han Han

Using a microelectromechanical systems (MEMS)-based Fab-on-a-Chip, we quench-condense lead thin-films. Suppressing the formation of lead islands makes it possible to grow a homogeneous and continuous film as thin as 2 nm, without the use of an adhesion lay ...

Amer Chemical Soc2017

Efficient, compact and low loss thermo-optic phase shifter in silicon

Christophe Marcel Georges Galland

We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide g ...

Optical Soc Amer2014

Optimization Strategy of Numerical Simulations Applied to EPFL Substrate Model

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

A new methodology for modeling minority carriers diffusion in Smart Power ICs substrate using standard circuit simulators has been proposed by EPFL. For this purpose, a parasitic substrate network consisting of lumped elements is extracted from the circuit ...

Ieee2014

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

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