Concept

Magnetic semiconductor

Publications associées (199)

Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals

Hybrid density functional calculations and atomistic models are used to study point defects in III-V compounds. We first study dangling-bonds in InxGa1-xAs. In GaAs, the cation dangling-bond levels are found in the upper part of the band gap, but they are ...

Elsevier2011

Tris(2-(1H-pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Chenyi Yi, Amalie Dualeh, Julian Burschka

Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexe ...

2011

Study of Diluted Magnetic Semiconductors

Zlatko Mickovic

Diluted magnetic semiconductors (DMS), semiconductors in which a fraction of non-magnetic sites have been replaced with their magnetic counterparts, have been in the limelight of the scientific community since the turn of the 21st century. The interest in ...

EPFL2010

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Klaus Kern, Hagen Klauk

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...

2010

Photocatalytic activity of N, S co-doped and N-doped commercial anatase TiO2 powders towards phenol oxidation and E. coli inactivation under simulated solar light irradiation

César Pulgarin, Julian Andrés Rengifo Herrera

Nitrogen and sulfur co-doped and N-doped TiO2 anatase TKP 102 (Tayca) were prepared by manual grinding with thiourea and urea, respectively, and annealing at 400 degrees C. Both materials showed visible-light absorption as measured by Diffuse Reflectance S ...

2010

Modified surface

Michael Graetzel, Shaik Mohammed Zakeeruddin, Péter Kalman Péchy

The present invention relates to modified surfaces. The surfaces comprise an inorganic material on which a phosphinic acid derivative is adsorbed. The phosphinic acid thus turns out to be a new anchoring group useful for surface derivatisation. The inventi ...

2010

P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Carlo Colombo, Bernt Ketterer, Tonko Garma, Marco Nicotra

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...

American Chemical Society2010

Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

Klaus Kern, Hagen Klauk, Frederik Sebastian Ante

Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring osci ...

2010

Tailored-Potential Pyramidal Quantum Dot Heterostructures

Valentina Troncale

Semiconductor quantum dots are usually compared to artificial atoms, because their electronic structure consists of discrete energy levels as for natural atoms. These artificial systems are integrated in solid materials and can be localized with a spatial ...

EPFL2010

Theoretical Assessment of Nd:YAG Ceramic Laser Performance

Paul Bowen, Ulrich Aschauer

An approach combining microstructural and optical modeling based on atomistic simulation results is proposed, in order to assess the performance of Nd:YAG laser ceramics resulting rom luminescence and transparency changes as a function of grain size and do ...

2010

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