Concept

Mémoire RAM non volatile

Publications associées (72)

Charging dynamics of localized 2D layers of Si nanocrystals embedded into SiO2 by stencil masked ultra low energy ion implantation process

Jürgen Brugger, Andreea Veronica Savu, Marc Antonius Friedrich van den Boogaart

Flash memories based on nanoparticles (NPs) offer an attractive alternative for performance enhancement and size downscaling of non-volatile memory cells. In these devices, Coulomb blockade and quantized charging effects can be exploited at room temperatur ...

2008

Polarisation reversal in ferroelectric PVDF and PZT films

Roman Gysel

Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...

EPFL2008

KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography

Jürgen Brugger, Andreea Veronica Savu, Marc Antonius Friedrich van den Boogaart

Non volatile flash memories based on nanoparticles (nps) are one of the identified routes to a further downscaling of future CMOS technology. New features such as Coulomb blockade and quantized charging effects can appear at room temperature only for a lim ...

2008

Ferroelectric gate on AlGaN/GaN heterostructures

Lisa Malin

The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...

EPFL2007

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Nava Setter, Igor Stolichnov, Enrico Colla

Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application

Wei Chen

A memory capacitor with a multistacked tunnel layer of Al2O3/HfO2/SiO2 (AHO) has been fabricated together with HfO2 charge trapping layer and Al2O3 control oxide layer. The resulting capacitor exhibits a memory window as large as 7.6 V for +/- 12 V sweep v ...

American Institute of Physics2007

Photoluminescence characterization of few-nanocrystals electronic devices

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

Photoluminescence (PL) spectroscopy is demonstrated as a suitable technique to characterize silicon nanocrystals (Si-NCs)-based nonvolatile memory devices. The 2D array of Si-NCs forming the floating gate is obtained by low-energy ion implantation in thin ...

2006

Integration and modeling of ferroelectric devices in a standard CMOS porcess for low power non-volatile memories

Vincent Meyer

The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...

EPFL2005

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

Current-driven switching of exchange biased spin-valve giant magnetoresistive nanopillars using a conducting nanoprobe

Jürgen Brugger, Johannes Steen

An array of exchange biased spin-valve giant-magnetoresistance nanopillars was fabricated and the current I dependence of the resistance R was investigated using an electrically conducting atomic-force microscope (AFM) probe contact at room temperature. We ...

2004

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