Concept
Automotive electronics
Publications associées (17)
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Elison de Nazareth Matioli, Pirouz Sohi, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu
In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...
2021Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies
The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...
EPFL2021Automated Design Tool for Automotive Control Actuators
Jürg Alexander Schiffmann, Cyril Picard
Automated design tools are seldom used in industry. Their potential, however, is high, especially in companies mostly active in variant design, where custom tools could help cut down development time in the early stages. The design of geared electro-mechan ...
2020Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
Elison de Nazareth Matioli, Jun Ma, Minghua Zhu
In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs. We have developed and optimized a selective and low-damage p-GaN etching recipe to stop at the AlGaN ...
IEEE2020High-performance normally-off tri-gate GaN power MOSFETs
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...
IEEE2019Silicon microcantilevers with MOSFET detection
Luis Guillermo Villanueva Torrijo
We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...
2010