Concept

Automotive electronics

Related publications (17)

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Pirouz Sohi, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

2021

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Armin Jafari

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

EPFL2021

Automated Design Tool for Automotive Control Actuators

Jürg Alexander Schiffmann, Cyril Picard

Automated design tools are seldom used in industry. Their potential, however, is high, especially in companies mostly active in variant design, where custom tools could help cut down development time in the early stages. The design of geared electro-mechan ...

2020

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs. We have developed and optimized a selective and low-damage p-GaN etching recipe to stop at the AlGaN ...

IEEE2020

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

Influence of structural and electrostatic disorder on transport properties of monolayers of two-dimensional semiconductors

Dmitry Ovchinnikov

Two-dimensional (2D) materials are under intensive investigation recently due to variety of electronic properties, ranging from insulators (h-BN) to semi-metals (graphene), semiconductors (MoS2, WSe2) with wide variability of band-gap and correlated phases ...

EPFL2017

Reconfigurable electronics based on metal-insulator transition

Wolfgang Amadeus Vitale

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

EPFL2016

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

Mihai Adrian Ionescu, Alexandru Rusu, Sebastian Thimotee Bartsch

Nanoelectromechanical systems (NEMS) offer the potential to revolutionize fundamental methods employed for signal processing in today's telecommunication systems,1-4 owing to their spectral purity and the prospect of integration with existing technology. I ...

Institute of Physics2012

Silicon microcantilevers with MOSFET detection

Luis Guillermo Villanueva Torrijo

We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...

2010

SMD pressure and flow sensor for compressed air in LTCC technology with integrated electronics

Peter Ryser, Thomas Maeder, Nicolas Craquelin

We propose an SMD (surface mount device) sensor in LTCC (low-temperature co-fired ceramic) technology specially designed for standard industrial compressed air. It combines the measurement of pressure, flow, and temperature, with its integrated signal cond ...

Elsevier2009

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