Concept

Diélectrique high-k

Publications associées (425)

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

Mihai Adrian Ionescu, Julien Perruisseau-Carrier, Montserrat Fernandez-Bolanos Badia

A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of ...

Elsevier2008

Low strain sensitivity of the dielectric property of pyrochlore Bi-Zn-Nb-O films

Thermal strain sensitivity of the dielectric property was investigated for (111)-textured polycrystalline Bi-Zn-Nb-O films. Cubic pyrochlore films with similar crystallinity and the degree of the orientation were obtained on various substrates, and their 1 ...

2008

KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography

Jürgen Brugger, Andreea Veronica Savu, Marc Antonius Friedrich van den Boogaart

Non volatile flash memories based on nanoparticles (nps) are one of the identified routes to a further downscaling of future CMOS technology. New features such as Coulomb blockade and quantized charging effects can appear at room temperature only for a lim ...

2008

Optimization of nanoelectronic systems' reliability under massive defect density using Cascaded R-fold modular redundancy

Alexandre Schmid, Yusuf Leblebici, Milos Stanisavljevic

The theoretical analysis of R-fold modular redundancy, cascaded R-fold modular redundancy and NAND multiplexing is presented and these fault-tolerant techniques are compared in terms of resistance to massive levels of defect density. Optimal cluster size a ...

2008

Mechanical characterization of a dielectric elastomer microactuator with ion-implanted electrodes

Herbert Shea, Samuel Rosset, Muhamed Niklaus

We report on the mechanical characterization and modeling of a non-prestretched dielectric elastomer diaphragm microactuator with ion-implanted electrodes under the influence of a distributed load (pressure). Thin polydimethysiloxane (PDMS) membranes (30 u ...

2008

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

Semiconductor based high resistance

Yusuf Leblebici

The field of invention is in the area of MOS integrated circuits operating with very low currents in the weak inversion region or sub threshold. The method aims at providing linear resistor with a value in the multi-mega ohm range. In order to produce Sili ...

2008

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Mihai Adrian Ionescu, Maher Kayal, Didier Bouvet, Kirsten Emilie Moselund, Cédric Meinen, Vincent Pott

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

Pseudoferroelectricity: A possible scenario for doped ZnO

Alexander Tagantsev

A phenomenological Landau-theory model, where a crystal on cooling from a state with polar symmetry exhibits a maximum of dielectric permittivity and polarization-field hysteresis loops, is offered. The model is equivalent to that of a true ferroelectric i ...

2008

Electrical properties of functionalized nanowire field effect transistors

Ralf Thomas Weitz

The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...

EPFL2008

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