Publications associées à Dopant

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Dynamic Nuclear Polarization of Inorganic Halide Perovskites

David Lyndon Emsley, Dominik Józef Kubicki, Gabriele Stevanato, Michael Allan Hope, Aditya Mishra

The intrinsic low sensitivity of nuclear magnetic resonance (NMR) experiments limits their utility for structure determination of materials. Dynamic nuclear polarization (DNP) under magic angle spinning (MAS) has shown tremendous potential to overcome this ...

2023

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and electrochemical capa ...

IOP PUBLISHING LTD2021

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Mathieu Gérard Boccard, Laurie-Lou Senaud, Jan Haschke, Luca Massimiliano Antognini, Jean Cattin, Julie Amandine Dreon, Mario Joe Lehmann, Vincent Philippe Paratte

Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We invest ...

2021

Luminescent lanthanide nanocomposites in thermometry: Chemistry of dopant ions and host matrices

Mohammad Khaja Nazeeruddin

Recently, there has been observed huge progress in the advancement of remote optical nanothermometry, as it plays a vital role in remote, noninvasive, and remote temperature sensing, which is especially important for various bio-applications, e.g., in ther ...

ELSEVIER SCIENCE SA2021

Importance of Long-Range Channel Sr Displacements for the Narrow Emission in Sr[Li2Al2O2N2]:Eu2+ Phosphor

Samuel Poncé

The recently discovered Sr[Li2Al2O2N2]:Eu2+ red phosphor, candidate for the next generation of eco-efficient white light-emitting diodes, exhibits excellent emission spectral position and exceptionally small linewidth. It belongs to the UCr4C4-structure fa ...

WILEY-V C H VERLAG GMBH2021

Accelerating materials discovery for solid state electrolytes

Matthieu Gilles Mottet

The development of new solid-state electrolytes is a key step in improving the performance and safety of battery technology. Although the use of first-principle methods has proved invaluable in better understanding the process at play in these materials, ...

EPFL2020

Scalable Nanowire Networks: Growth and Functionality

Martin George Friedl

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Mihai Adrian Ionescu, Andreas Schueler, Igor Stolichnov, Anna Krammer, Teodor Rosca, Matteo Cavalieri, Riyaz Mohammed Abdul Khadar, Andrei Müller, Fatemeh Qaderi Rahaqi

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

Elucidating the Doping Mechanism in Fluorene-Dithiophene-Based Hole Selective Layer Employing Ultrahydrophobic Ionic Liquid Dopant

Mohammad Khaja Nazeeruddin, Sanghyun Paek, Tom Theodorus Antonius Lummen, Laura Calio

Perovskite solar cells have set a new milestone in terms of efficiencies in the thin film photovoltaics category. Long-term stability of perovskite solar cells is of paramount importance but remains a challenging task. The lack of perovskite solar cells st ...

2020