Concept

Strained silicon

Publications associées (75)

Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals

The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...

EPFL2012

Disentanglement of Surface and Bulk Rashba Spin Splittings in Noncentrosymmetric BiTeI

Jan Hugo Dil, Thorsten Schmitt, Vladimir N. Strocov, Stefan Peter Muff

BiTeI has a layered and noncentrosymmetric structure where strong spin-orbit interaction leads to a giant Rashba spin splitting in the bulk bands. We present direct measurements of the bulk band structure obtained with soft x-ray angle-resolved photoemissi ...

2012

High numerical aperture silicon collimating lens for mid-infrared quantum cascade lasers manufactured using wafer-level techniques

Hans Peter Herzig, Lubos Hvozdara, Pierre-Yves Baroni, Joab Di Francesco, Antoine Muller

We present an aspheric collimating lens for mid-infrared (4-14 µ) quantum cascade lasers. The lenses were etched into silicon by an inductively coupled plasma reactive ion etching system on wafer level. The high refractive index of silicon reduces the heig ...

2012

Microstructure and thermoelectric properties of bulk and porous n-type silicon-germanium alloy prepared by HUP

Cyril Cayron

The optimization of powders preparation and consolidation process leads to the achievement of a high thermoelectric figure of merit (ZT=1.25 at 800°C) in an n-type silicon-germanium (SiGe) alloy hot pressed at low heating rate. It has been experimentally o ...

2012

Direct observation of competition between superconductivity and charge density wave order in YBa2Cu3O6.67

Joël Mesot, Johan Juul Chang

Superconductivity often emerges in the proximity of, or in competition with, symmetry-breaking ground states such as antiferromagnetism or charge density waves(1-5) (CDW). A number of materials in the cuprate family, which includes the high transition-temp ...

Nature Publishing Group2012

Development of High Temperature Platinum TSVs

Nico de Rooij, Danick Briand, Terunobu Akiyama, Rokhaya Gueye

We report on harsh-environment-compatible Pt-TSVs forming ohmic contacts with a highly doped bulk silicon. They were developed as a part of a Single Wall Carbone NanoTube (SWCNT) resonator device with 3D-packaging. The fundamental properties of the TSVs, e ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2011

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

2011

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

SWNT array resonant gate MOS transistor

Mihai Adrian Ionescu, Anupama Arun

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and e ...

2011

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