Concept
Silicium
Publications associées (764)
Bodily implant microelectrode and bodily implant microelectrode fabrication method
Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni
The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...
2024Thermal transport of glasses via machine learning driven simulations
Accessing the thermal transport properties of glasses is a major issue for the design of production strategies of glass industry, as well as for the plethora of applications and devices where glasses are employed. From the computational standpoint, the che ...
Lausanne2024Influence of Si3N4 fillers and pyrolysis profile on the microstructure of additively manufactured silicon carbonitride ceramics derived from polyvinylsilazane
In this work, various methods were used to improve the printability of a photocurable polyvinylsilazane resin filled with silicon nitride particles for digital light processing. The developed resin was used as a preceramic polymer for polymer-to-ceramic co ...
Taylor & Francis Ltd2024Hybrid silicon photonics for terahertz applications
This talk will highlight opportunities for terahertz science and technology from nonlinear integrated photonic circuits by exploring waveguides, resonators and terahertz antennas. Their present and future applications in metrology, emission and waveform co ...
Spie-Int Soc Optical Engineering2024Liquid metal infiltration of silicon based alloys into porous carbonaceous materials Part-III: Experimental verification of conversion products and infiltration depth by infiltration of Si-Zr alloy into mixed SiC/ graphite preforms
Annapaola Parrilli, Ludger Weber, Caroline Hain, Alberto Ortona, Manoj Kondibhau Naikade
Porous carbonaceous preforms, made from graphite and silicon carbide (SiC) powders, with varying graphite powder mass fractions and particle sizes, were infiltrated at 1500 degrees C and 1700 degrees C by Si-8 at. pct Zr alloy to produce dense Si-Zr-SiC co ...
ELSEVIER SCI LTD2023III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications
This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...
EPFL2023