Publications associées à Saphir

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

EDP Sciences2009

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Barrier-layer scaling of InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

2008

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Nicolas Grandjean, Raphaël Butté, Denis Martin, Tiankai Zhu

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

2007

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek

AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...

2007

2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Elison de Nazareth Matioli

The authors report on InGaN microcavity light-emitting diodes with an effective thickness of similar to 450 nm at the emission wavelength of similar to 415 nm. The starting material for the flip-chip laser lift-off device is a structure with an active regi ...

Amer Inst Physics2007

Real-time dual-wavelength digital holographic microscopy with a single hologram acquisition

Christian Depeursinge, Tristan Colomb, Etienne Cuche, Frédéric Montfort, Pierre Marquet, Jonas Kühn, Florian Charrière

A technique to perform two-wavelengths digital holographic microscopy (DHM) measurements with a single hologram acquisition is presented. The vertical measurement range without phase ambiguity is extended to the micron-range, thanks to the resulting synthe ...

2007

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Saphir

Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Barrier-layer scaling of InAlN/GaN HEMTs

Thermal stability of thin film corundum-type solid solutions of (Al1-xCrx)2O3 synthesized under low temperature non equilibrium conditions

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Real-time dual-wavelength digital holographic microscopy with a single hologram acquisition

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Chattez avec Graph Search

Thermal stability of thin film corundum-type solid solutions of (Al1-xCrx)2O3 synthesized under low temperature non equilibrium conditions

Barrier-layer scaling of InAlN/GaN HEMTs

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Real-time dual-wavelength digital holographic microscopy with a single hologram acquisition

2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer