Concept

Depletion and enhancement modes

Publications associées (32)

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Depletion Effect-mediated Association of Carbon Nanotube-Polymer Composites and Their Application as Inexpensive Electrode Support Materials

Paul Joseph Dyson, Zhangjun Huang

The association between carbon nanotubes (CNTs) and polymers to afford functional composites has been attributed to enthalpic interactions, neglecting the entropic depletion effect, in which bound solvents are released during the association process. Here, ...

AMER CHEMICAL SOC2020

EDGE2D-EIRENE simulations of the influence of isotope effects and anomalous transport coefficients on near scrape-off layer radial electric field

Olivier Sauter, Ambrogio Fasoli, Basil Duval, Stefano Coda, Jonathan Graves, Yves Martin, Duccio Testa, Patrick Blanchard, Alessandro Pau, Cristian Sommariva, Henri Weisen, Richard Pitts, Yann Camenen, Jan Horacek, Javier García Hernández, Marco Wischmeier, Nicola Vianello, Mikhail Maslov, Federico Nespoli, Yao Zhou, David Pfefferlé, Davide Galassi, Antonio José Pereira de Figueiredo, Jonathan Marc Philippe Faustin, Liang Yao, Dalziel Joseph Wilson, Hamish William Patten, Samuel Lanthaler, Bernhard Sieglin, Otto Asunta

EDGE2D-EIRENE (the 'code') simulations show that radial electric field, Er, in the near scrape-off layer (SOL) of tokamaks can have large variations leading to a strong local E x B shear greatly exceeding that in the core region. This was pointed out in si ...

2019

CJM: A Compact Model for Double-Gate Junction FETs

Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Electromagnetic Fields Associated With the M‐Component Mode of Charge Transfer

Marcos Rubinstein, Mohammad Azadifar, Davide Pavanello, Lixia He

In upward flashes, charge transfer to ground largely takes place during the initial continuous current (ICC) and its superimposed pulses (ICC pulses). ICC pulses can be associated with either M-component or leader/return-stroke like modes of charge transfe ...

2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

2019

Enhancing solar disinfection of water in PET bottles by optimized in-situ formation of iron oxide films. From heterogeneous to homogeneous action modes with H2O2 vs. O-2 - Part 2: Direct use of (natural) iron oxides

César Pulgarin, Sami Rtimi, Stefanos Giannakis, Sakine Shekoohiyan

Solar disinfection (SODIS) is a well-accepted intervention method, leading to an improvement in contaminated water sources. In this work, we attempted to further enhance the bacterial inactivation process during light exposure. By means of iron oxide addit ...

ELSEVIER SCIENCE SA2019

Long-lived coupled peeling ballooning modes preceding ELMs on JET

In some JET discharges, type-I edge localised modes (ELMs) are preceded by a class of low-frequency oscillations (Perez et al 2004 Nucl. Fusion 44 609). While in many cases the ELM is triggered during the growth phase of this oscillation, it is also observ ...

2019

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Matteo Cavalieri, Nicolò Oliva

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

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