Concept

Triode (électronique)

Publications associées (34)

Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

Klaus Kern, Marko Burghard, Pascal Gehring

We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B-fie ...

2012

Experimental study of the effect of a biased electrode grid attached to a limiter on plasma blob propagation in a toroidal confinement device using an ultrafast camera

Diane Virginie Marie Lançon

The main goal of this experiment is studying how blob propagation can be affected by an electrode grid in the case of an toroidal geometry with open field lines. Studies in this field are meant to better understand blob propagation in the SOLs of magnetic ...

2010

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

Electrochemical behaviour of ammonia (NH4+/NH3) on electrochemically grown anodic iridium oxide film (AIROF) electrode

Christos Comninellis, Olivier Frey, Agnieszka Kapalka, Stéphane Fierro

The electrochemical behaviour of ammonia (NH4+/NH3) in sodium perchlorate at pH 9 has been investigated on electrochemically grown anodic iridium oxide film (AIROF) electrode. In base electrolyte at pH 9, the Ir(IV)/Ir(III) surface redox couple exhibits un ...

2009

Fabrication and Characterisation of Cathode Support-tubes for Micro-tubular SOFC Application

Jan Van Herle, Heinrich Hofmann, Paul Bowen, Stefan Diethelm, John Espen Rossen

Tubes of diameter

2009

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Klaus Kern, Hagen Klauk, Marko Burghard, Ralf Thomas Weitz

The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and cir ...

2009

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...

2009

Flow Properties of Tailored Net-Shape Thermoplastic Composite Preforms

Véronique Michaud, Patrick Blanchard, Martyn Douglas Wakeman, Simon Jespersen

A novel thermoplastic programmable preforming process, TP-P4, has been used to manufacture preforms for non-isothermal compression molding. Commingled glass and polypropylene yarns are deposited by robot onto a vacuum screen, followed by a heat-setting ope ...

Springer Netherlands2009

DC bias dependent shift of resonance frequencies in BST thin film membranes

Nava Setter, Paul Muralt

DC bias dependent acoustic resonance phenomena have been observed in micromachined tunable thin film capacitors based on Ba0.3Sr0.7TiO3 (BST) thin films. The antiresonance frequency is only weakly dc bias dependent, whereas the resonance frequency exhibits ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Low-power and low-voltage analog baseband and quadrature frequency synthesizer

Uroschanit Yodprasit

Following the trend in portable wireless communications, this dissertation explores new approaches to designing of power-critical building blocks in the elementary circuit level. Specifically, the work focuses on designs of baseband continuous-time Gm-C fi ...

EPFL2006

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