Publications associées à Linear integrated circuit

Monolithic Integration of GaN-Based NMOS Digital Logic Gate Circuits with E-Mode Power GaN MOSHEMTs

In this work, we demonstrate high-performance NMOS GaN-based logic gates including NOT, NAND, and NOR by integration of E/D-mode GaN MOSHEMTs on silicon substrates. The load-to-driver resistance ratio was optimized in these logic gates by using a multi-fin ...

IEEE2018

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Matthias Bucher, Mathieu Yves Hervé Coustans

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...

IEEE2017

Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Edouard Giacomin

Routing multiplexers based on pass-transistors or transmission gates are an essential components in many digital integrated circuits. However, whatever structure is employed, CMOS multiplexers have two major limitations: 1) their delay is linearly related ...

Ieee-Inst Electrical Electronics Engineers Inc2017

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi, Maxime Victor Thammasack, Tsung-Han Lin, David Baudouin

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Anna Krammer, Teodor Rosca, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Cem Alper, Arnab Biswas, Emanuele Andrea Casu, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Publishing Group2017

Ternary semitransparent organic solar cells with a laminated top electrode

Frank Nüesch, Roland Hany, Jakob Heier, Lei Wang, Surendra Babu Anantharaman, Paolo Testa

Tinted and colour-neutral semitransparent organic photovoltaic elements are of interest for building-integrated applications in windows, on glass roofs or on facades. We demonstrate a semitransparent organic photovoltaic cell with a dry-laminated top elect ...

Taylor & Francis Ltd2017

Modelling the performance of amorphous and crystalline silicon in different typologies of building-integrated photovoltaic (BIPV) conditions

Alessandro Francesco Aldo Virtuani

In this work we use and further elaborate a previously proposed model to describe the daily performance ratio of amorphous (a-Si) and crystalline silicon (c-Si) photovoltaic solar modules under real operating conditions. For both technologies, the model wa ...

Pergamon-Elsevier Science Ltd2017

An integrated interface for peripheral neural system recording and stimulation: system design, electrical tests and in-vivo results

Stanisa Raspopovic, Roberto Puddu

The prototype of an electronic bi-directional interface between the Peripheral Nervous System (PNS) and a neuro-controlled hand prosthesis is presented. The system is composed of 2 integrated circuits: a standard CMOS device for neural recording and a HVCM ...

Springer Verlag2016

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Linear integrated circuit

Monolithic Integration of GaN-Based NMOS Digital Logic Gate Circuits with E-Mode Power GaN MOSHEMTs

Cyber-Medical Systems: Requirements, Components and Design Examples

Coating for optical and electronic applications

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Ternary semitransparent organic solar cells with a laminated top electrode

Modelling the performance of amorphous and crystalline silicon in different typologies of building-integrated photovoltaic (BIPV) conditions

An integrated interface for peripheral neural system recording and stimulation: system design, electrical tests and in-vivo results

Graph Chatbot

Chattez avec Graph Search

Monolithic Integration of GaN-Based NMOS Digital Logic Gate Circuits with E-Mode Power GaN MOSHEMTs

Cyber-Medical Systems: Requirements, Components and Design Examples

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Coating for optical and electronic applications

Ternary semitransparent organic solar cells with a laminated top electrode

Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure

Modelling the performance of amorphous and crystalline silicon in different typologies of building-integrated photovoltaic (BIPV) conditions

An integrated interface for peripheral neural system recording and stimulation: system design, electrical tests and in-vivo results

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor