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In this paper, we present an improved version of microcavity light-emitting diodes, relying on the use of a low-index material, aluminum oxide. Our work addresses in particular the injection scheme required by the insulating nature of this oxide. The devic ...
Quantum dots (QDs) are nanoscopic semiconductor crystals. Electronic transitions inside QDs lead to photon emission with unique properties. Photons can for instance be emitted as triggered single photons or as pairs of correlated photons with different ene ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...
A tandem cell or photoelectrochemical system for the cleavage of water to hydrogen and oxygen by visible light has two superimposed photocells, both cells being connected electrically. The photoactive material in the top cell is a semiconducting oxide plac ...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photoluminescence (PL) of InGaN/GaN quantum wells rapidly vanishes when the temperature increases from 10 to 100 K and is totally quenched above 150 K. This is the cons ...
This paper introduces a novel of mini-hybrid solar power plant integrating a field of solar concentrators, two superposed Organic Rankine Cycles (ORC) and a (bio)Diesel engine. Turbines for the organic Rankine Cycles are hermetic scroll expander-generators ...
A tandem cell or photoelectrochemical system for the cleavage of water to hydrogen and oxygen by visible light has two superimposed photocells, both cells being connected electrically. The photoactive material in the top cell is a semiconducting oxide plac ...
(Ecole Polytechnique Federale de Lausanne (EPFL), Switz.).2001
Nanocryst. TiO2-based films with a special penniform microstructure were prepd. by reactive d.c. magnetron sputtering followed by dye sensitization. The films were integrated in a solar cell configuration and were able to yield a higher photocurrent than s ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...