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Concept
Silicon controlled rectifier
Résumé
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall
and commercialized by Frank W. "Bill" Gutzwiller in 1957.
Some sources define silicon-controlled rectifiers and thyristors as synonymous while other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors; the latter being devices with at least four layers of alternating n- and p-type material. According to Bill Gutzwiller, the terms "SCR" and "controlled rectifier" were earlier, and "thyristor" was applied later, as usage of the device spread internationally.
SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed to TRIACs, which are bidirectional (i.e. charge carriers can flow through them in either direction). SCRs can be triggered normally only by a positive current going into the gate as opposed to TRIACs, which can be triggered normally by either a positive or a negative current applied to its gate electrode.
There are three modes of operation for an SCR depending upon the biasing given to it:
Forward blocking mode (off state)
Forward conduction mode (on state)
Reverse blocking mode (off state)
In this mode of operation, the anode (+, p-doped side) is given a positive voltage while the cathode (−, n-doped side) is given a negative voltage, keeping the gate at zero (0) potential i.e. disconnected. In this case junction J1and J3 are forward-biased, while J2 is reverse-biased, allowing only a small leakage current from the anode to the cathode.
Source officielle
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