Concept

Silicon controlled rectifier

Résumé
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957. Some sources define silicon-controlled rectifiers and thyristors as synonymous while other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors; the latter being devices with at least four layers of alternating n- and p-type material. According to B
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