Publications associées à Loi de Moore

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-In ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Colloidal transport and deposition through dense vegetation

David Andrew Barry, Li Chen, Congrong Yu

The effectiveness of submerged synthetic aquatic vegetation on removal of colloids from flowing water was investigated to explore retention of particulate nonpoint source pollutants in aquatic systems. In colloid transport experiments, the deposition rate ...

2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Guilherme Migliato Marega, Zhenyu Wang

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Electron Emission Regimes of Planar Nano Vacuum Emitters

Yujia Yang, Alberto Nardi, Marco Turchetti

Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Tzu-Hsien Shen

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

NATURE RESEARCH2021

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Jun Ma, Luca Nela, Catherine Erine

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

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Loi de Moore

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Colloidal transport and deposition through dense vegetation

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Electron Emission Regimes of Planar Nano Vacuum Emitters

Multi-channel nanowire devices for efficient power conversion

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Graph Chatbot

Chattez avec Graph Search

Colloidal transport and deposition through dense vegetation

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Electron Emission Regimes of Planar Nano Vacuum Emitters

Multi-channel nanowire devices for efficient power conversion

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon