Quartz (électronique)

Résumé

En électronique, un quartz est un composant électronique qui possède comme propriété utile d'osciller à une fréquence stable lorsqu'il est stimulé électriquement. Les propriétés piézoélectriques remarquables du minéral de quartz permettent d'obtenir des fréquences d'oscillation très précises, qui en font un élément important en électronique numérique ainsi qu'en électronique analogique. Historique Les propriétés piézoélectriques du quartz qui sont à la base de son emploi en électronique sont découvertes par les frères Pierre et Jacques Curie en 1880 : le cristal leur sert d'abord de détecteur des très faibles impulsions électriques. L'utilisation des échos sonar provoqués par un quartz excité électriquement a été explorée à partir de 1915 par Paul Langevin en France et W. G. Cady aux Etats-Unis.Le premier oscillateur électronique stabilisé par un cristal de quartz gemme est réalisé en 1918, les diapasons sont mis dans des tubes électroniques.Les premiers quart

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It has already been a few years since the first appearance of micro-electromechanical systems (MEMS) in academic research. Since then, a broad number of devices have been designed under this generic term. Bulk-acoustic wave (BAW) resonators are among the few of them which have become exploited at industrial level. They are mainly used to implement filters for mainstream telecommunication applications. In a different domain, potential applications for integrated wireless transceivers are flourishing. While some of them require always higher data rates, others need devices with low data rate but even lower power consumption. The goal of this thesis is to explore ways of using BAW resonators to implement building blocks for such a low-power radio and actually verify the postulate that this could help improving power consumption as well as miniaturize key functionalities. For the active integrated circuit part, the choice of a standard digital 0.18µm CMOS process established itself for its low cost and ubiquity. The specifications for the developed radio receiver are calculated for a physical layer derived from the well known Bluetooth communication protocol in the 2.4GHz ISM band with similar applications scenarii but with much lower data rates and wider channel spacing. After presenting the advantages and limitations of the devices, the implications for using BAWresonators to implement a low-power radio are investigated at circuit and system levels and a super-heterodyne architecture is proposed. A selective low-noise amplifier (LNA) is used at the circuit front-end to yield image and blocker rejection. Measurements for the RF front-end comprising an external balun, the selective LNA, a first downconversionmixer and an intermediate-frequency (IF) amplifier showed an overall noise figure of 11dB for a current consumption of 1.5mA under 1.2V. The high selectivity of the design yields an image rejection ratio of at least 50dB and allows to decrease linearity requirements and thus power consumption. A slightly improved version of the same front-end integrated together with the analog baseband signal processing chain but still using external local oscillators showed sensitivities of -96dBm at 100kbps symbol rate and -93dBm at 200kbps with an external state-of-the art FSK demodulator, allowing to extrapolate a global noise figure of 12.2dB for a global current consumption of 2.3mA under 1.2V. The proposed solution for the frequency synthesis uses both a BAW oscillator for the first downconversion to IF and a quadrature quasi-harmonic relaxation oscillator to translate the signals to baseband. The relaxation oscillator is embedded within a phase-locked loop (PLL) for which all the required blocks are discussed. Particularly, a novel modular multi-modulus frequency divider is presented, which does not necessitate complicated logic to yield the wanted division ratio and uses dynamic logic. The necessary digital circuitry to control the frequency generation is discussed as well. Finally, measurements for the complete receiver using the proposed frequency synthesis as well as digital control and demodulator implemented on FPGA are presented.

EPFL2008

Chargement

Design of a 2.4 Ghz BAW-Based CMOS Transmitter

Matteo Contaldo

In recent years, bulk acoustic wave resonators (BAW) in combination with RF circuits have shown a big potential in achieving the low-power consumption and miniaturization level required to address wireless sensor nodes (WSN) applications. A lot of work has been focused on the receiver side, by integrating BAW resonators with low noise amplifiers (LNA) and in frequency synthesis with the design of BAW-based local oscillators, most of them working at fixed frequency due to their limited tuning range. At the architectural level, this has forced the implementation of several single channel transceivers. This thesis aims at exploring the use of BAW resonators in the transmitter, proposing an architecture capable of taking full advantage of them. The main objective is to develop a transmitter for WSN multi-channel applications able to cover the whole 2.4 GHz ISM band and enable the compatibility with wide-spread standards like Bluetooth and Bluetooth Low Energy. Typical transmissions should thus range from low data rates (typically tens of kb/s) to medium data rates (1 Mb/s), with FSK and GFSK modulation schemes, should be centered on any of the channels provided by these standards and cover a maximum transmission range of some tens of meters. To achieve these targets and circumvent the limited tuning range of the BAW oscillator, an up-conversion transmitter using wide IF is used. The typical spurs problems related to this transmitter architecture are addressed by using a combined suppression based on SSB mixing and selective amplification. The latter is achieved by cointegration of a high efficiency power amplifier with BAW resonators, which allows performing spurs filtering while preserving the efficiency. In particular the selective amplifier is designed by including in the PA analysis the BAW resonator parameters, which allows integrating the BAW filter into the passive network loading the amplifier, participating in the drain voltage shaping. Finally, the frequency synthesis section uses a fractional division plus LC PLL filtering and further integer division to generate the IF signals and exploit the very-low BAW oscillator phase noise. The transmitter has been integrated in a 0.18 µm standard digital CMOS technology. It allows addressing the whole 80 MHz wide 2.4 GHz ISM band. The unmodulated RF frequency carrier demonstrates a very-low phase noise of –136 dBc/Hz at 1 MHz offset. The IF spurs are maintained lower than –48 dBc, satisfying the international regulations for output power up to 10 dBm without the use of any quadrature error compensation in the transmitter. This is achieved thanks to the rejection provided by the SSB mixer and the selective amplifier, which can reach drain efficiency of up to 24% with integrated inductances, including the insertion losses of the BAW filter. The transmitter consumes 35.3 mA at the maximum power of 5.4 dBm under 1.6 V (1.2 V for the PA), while transmitting a 1 Mb/s GFSK signal and complying with both Bluetooth and Bluetooth Low Energy relative and absolute spectrum requirements.

EPFL2011

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Nanogap MEM resonators on SOI

Nicoleta-Diana Ciressan

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, macroscopic size and CMOS incompatibility of quartz-crystal resonators draw a major limit on the miniaturization of wireless communication applications. For this reason, silicon microelectromechanical (MEM) resonators are considered promising candidates to replace quartz-oscillators in VLSI communication systems, due to their compactness, design flexibility and CMOS process compatibility. This work reports on the design, fabrication and characterization of MEM bulk lateral resonators with resonance frequencies in the order of tens of MHz. The need of stable, low cost and high yield processes for fabricating devices with extremely narrow (sub 100 nm) transduction gaps is a main research driver, together with the requirements of improved designs which include high quality factors and appropriate power handling. We are investigating two major designs: (1) longitudinal beam resonators and (2) novel fragmented-membrane resonators that respond to both high quality factor (Q) and low motional resistance (Rm) requirements. We propose several design optimizations for solving some of the issues which currently affect the MEM resonator performance, like the frequency stability and Q enhancement through energy loss minimization. An original fabrication process is presented, which enables the manufacturing of SOI-based, fully monocrystalline devices with 100 nm transduction gaps and aspect ratios as high as [60:1], without the need of advanced lithography techniques. We successfully validate the fabrication process on two different SOI substrates, with silicon film thicknesses of 1.5 µm and 6.25 µm. This thickness range combined to the doping level corresponds to partially depleted SOI, which can be a substrate of choice for the fabrication of future integrated hybrid MEMS-CMOS integrated circuits for communication applications. The fabricated structures are successfully characterized, demonstrating excellent resonator performance at room temperature. Q's as high as 235'000 and Rm's as low as 59 kΩ have been extracted in vacuum. Atmospheric pressure frequency response measurements of the fragmented membrane resonators show Q's of 3'600. This value is among the best reported to date, opening the possibility for atmospheric pressure applications such as mass-detection for gas sensing applications with detection done without a special package, just by direct exposure of the resonator to the environment. A novel study on temperature dependence (between 80 K and 320 K) of the fragmented membrane resonators is presented and discussed. Significant Q increase and Rm reduction are experimentally observed at cryogenic temperatures. The bulk mode resonators developed and discussed in this thesis can successfully be integrated in oscillator circuits, as we demonstrate by simulating a Pierce topology based on the calibrated equivalent circuit model of a 24.48 MHz fragmented membrane BLR. Our oscillator shows very good phase-noise performance of -142 dBc/Hz at 1 kHz offset from the carrier and the noise floor at -144 dBc/Hz, which nearly meets the GSM specifications.

EPFL2009

Chargement