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The presence of free charges and numerous discontinuities separating liquid, gas, and solid phases in partially-saturated soils give rise to a relatively understudied phenomenon of interfacial polarization that could impact bulk dielectric permittivity mea ...
A sensor for measuring adsorption on a substrate has been designed including a contactless detection scheme, called supercapacitive admittance tomoscopy (SCAT). The sensor comprises a thin dielectric layer with two parallel band electrodes on the one side ...
The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...
We discuss various decomposition schemes for analysing the dielectric constants of Zr silicates in terms of local properties. Such schemes serve the purpose of predicting the dielectric constants of amorphous alloys, when their system size precludes the po ...
In this work the development of a low-temperature scanning probe microscope and the investigation of thin insulating films at the atomic limit is presented. The scanning probe microscope has been designed in a modular way to provide large flexibility for t ...
The operational range of MEMS electrostatic parallel plate actuators can be extended beyond pull-in with the presence of an intermediate dielectric layer, which has a significant effect on the behavior of such actuators. Here we study the behavior of canti ...
We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...
In this work, a set of low-temperature thick-film dielectrics consisting of two high-lead low-temperature glasses, stabilised by various amounts of alumina filler, is characterised on alumina and aluminium metal, as a function of firing temperature. Corres ...
We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility chi(x;omega) is introduced to describe variations of the dielectric response over length scales of the order of ...
We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...