Concept

Dielectric strength

Related publications (160)

Supercapacitive Admittance Tomoscopy

A sensor for measuring adsorption on a substrate has been designed including a contactless detection scheme, called supercapacitive admittance tomoscopy (SCAT). The sensor comprises a thin dielectric layer with two parallel band electrodes on the one side ...

2005

Factors Affecting Interfacial Polarization and Dielectric Behavior of Wet Soils

Yixing Chen, Dani Or

The presence of free charges and numerous discontinuities separating liquid, gas, and solid phases in partially-saturated soils give rise to a relatively understudied phenomenon of interfacial polarization that could impact bulk dielectric permittivity mea ...

2005

Modelling of dielectric constants of amorphous Zr silicates

Alfredo Pasquarello

We discuss various decomposition schemes for analysing the dielectric constants of Zr silicates in terms of local properties. Such schemes serve the purpose of predicting the dielectric constants of amorphous alloys, when their system size precludes the po ...

2005

Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates

Nava Setter, Dragan Damjanovic

The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...

2005

MEMS Parallel Plate Actuators: Pull-in, Pull-out and Other Transitions

Subrahmanyam Venkata Ravi Mohana Sai Gorthi

The operational range of MEMS electrostatic parallel plate actuators can be extended beyond pull-in with the presence of an intermediate dielectric layer, which has a significant effect on the behavior of such actuators. Here we study the behavior of canti ...

2005

Infrared properties of the Si-SiO2 interface from first principles

Feliciano Giustino

We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...

EPFL2005

Low-temperature thick-film dielectrics and resistors for metal substrates

Peter Ryser, Thomas Maeder, Caroline Jacq, Sonia Vionnet Menot

In this work, a set of low-temperature thick-film dielectrics consisting of two high-lead low-temperature glasses, stabilised by various amounts of alumina filler, is characterised on alumina and aluminium metal, as a function of firing temperature. Corres ...

2005

Theory of atomic-scale dielectric permittivity at insulator interfaces

Alfredo Pasquarello

We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility chi(x;omega) is introduced to describe variations of the dielectric response over length scales of the order of ...

2005

Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties

Alfredo Pasquarello, Angelo Bongiorno

We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...

2005

Ultrathin KCI films on Cu(110) and Cu(111) studied by low-temperature scanning tunneling microscopy

In this work the development of a low-temperature scanning probe microscope and the investigation of thin insulating films at the atomic limit is presented. The scanning probe microscope has been designed in a modular way to provide large flexibility for t ...

EPFL2005

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