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Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10-8 S/cm and an activation energy of 0.62 eV are obtai ...
The authors have investigated the transmission properties and defect characteristics of layer-by-layer metallic photonic crystals. Thay have demonstrated experimentally that the metallicity gap of these crystals extends to an upper band-edge frequency, and ...
We explore the defect distribution and the degradation in electron beam pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence measurements in a scanning electron microscope with transmission electron microscopy. We found that degradation ...
Interstitial clusters in bcc-Fe and fee-Cu and vacancy clusters in fcc-Cu have been studied by computer simulation using different types of interatomic potentials such as a short-ranged empirical pair potential of Johnson type, short-ranged many-body poten ...
A high density of small defect clusters, similar to those observed in irradiated or quenched metals. has been observed in the deformed f.c.c. metals Cu, Au and Ni. The preliminary results show that the defect clusters are predominantly stacking fault tetra ...
a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect dens ...
The interaction of vacancy loops (VLs) and stacking-fault tetrahedra (SFTs) with point defects and the processes of growth and shrinkage of VLs and SFTs have been studied using computer simulation and a long-range pair potential for copper. It was found th ...
We investigated the effects of disorder in Bi2Sr2CaCu2O8+x high temperature superconductor. We found that small defect densities already suppress the characteristic spectral signature of the superconducting state. The spectral line shape clearly reflects n ...
We have grown high-electron mobility transistor structures in the Al0.3Ga0.7As/In0.25Ga0.75As/GaAs material system with In0.25Ga0.75As channel thicknesses in the range 40-200 Angstrom. We have monitored the onset of channel relaxation using Hall mobility m ...
The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped, Be-dop ...
