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We propose a novel lithography method based on local deposition through miniature shadow-masks (nanostencils) for the fabrication of silicon based nanoelectronics devices. The method allows patterning of sub 100nm scale metal structures in a reproducible w ...
The endeavour to develop nanodevices demands for patterning methods in the nanoscale. To bring nanodevices to the market, there is a need for fast, low-cost replication nanopatterning methods. In addition, an increased flexibility of the nanopatterning met ...
Several models predict the reflectance of a rough metallic surface. They are however not adapted to the surfaces used in the packaging industry, such as boxes made of printed metallic plates. For printing purposes, metallic surfaces need to be varnished. L ...
We describe a new O-ring setup for wet-etching processes of microelectromechanical systems (MEMS) . Our new low-cost approach using siloxane-based seal rings entails the single-side etching of silicon and silicon dioxide using potassium hydroxide and buffe ...
The fabrication, characterization and application of polyimide-based flexible microelectrodes for recording from and stimulation of biological tissue are described. The planar electrodes consist of a polyimide-platinum-polyimide sandwich structure with a t ...
The low-frequency noise of lattice-matched InAlAs/InGaAs/InP high electron mobility transistors (HEMT's) gate recess etched with a highly selective dry etching process and with conventional wet etching were studied at different gate and drain biases for th ...
Institute of Electrical and Electronics Engineers1998
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
This work dealt with the establishment of a reproducible and industrially exploitable fabrication technology for piezoelectric MEMS based on PZT thin films. {100}-textured piezoelectric 1-4 μm thick films were found to be the most suited materials for MEMS ...
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
Photochem. reactions and etching efficiencies of polycryst. Cu and GaAs(100) with Cl2 were studied in the spectral range of 105-300 nm by using synchrotron radiation and for Cl2 pressures between 10-6 and 10 mbar. Dissocn. of Cl2 leads in the case of Cu to ...
