Rutile

Résumé

Le rutile est une espèce minérale composée de dioxyde de titane de formule TiO avec des traces de fer (près de 10 % parfois), tantale, niobium, chrome, vanadium et étain. Il est trimorphe avec la brookite et l'anatase. Il est la forme la plus stable de dioxyde de titane et est produit à haute température, la brookite se formant à des températures plus basses et l'anatase formée à des températures encore plus basses. Historique de la description et appellations Inventeur et étymologie Décrit par Abraham Gottlob Werner en 1803, le rutile dérive son nom du latin rutilus, rouge, en référence à sa couleur rouge profond observée dans quelques spécimens par lumière transmise. Topotype

Cajuelo, Vuitrago, Burgos, Castille et Leon, Espagne.

Synonymie Il existe pour ce minéral de nombreux synonymes :

cajuélite (en référence au topotype de l'espèce) ;
crispite : d'après le Crispalt, massif du Saint-Gothard, Suisse (Delametherie, 1795) ;
dic

Source officielle

https://fr.wikipedia.org/wiki/Rutile

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Chargement

Free carriers in nanocrystalline titanium dioxide thin films

Simon Springer

This thesis analyzes the properties of heavily doped nanocrystalline titanium dioxide. Thin films were deposited by magnetron sputtering with either water vapor as reactive gas or a periodically interrupted oxygen supply. The samples were at the same time electrically conducting and transparent. They consisted of mixtures of rutile, anatase and amorphous phases. Titanium dioxide is chemically stable, hard, non-toxic, transparent, and inexpensive. Due to a high refractive index it is often found in optical applications as a thin film coating. For many purposes it is interesting to take advantage of a combination of good transparency and electrical conductivity. An even larger field of applications would open if the electric conductivity of TiO2 could be increased in a controlled manner. Conventional bulk doping is limited, however, by low solubility limits. Highly conducting nanocrystalline TiO2 thin films have been obtained recently by sputtering in presence of water vapor. The present project intends to elucidate the doping mechanisms at work in such films. In addition, an alternative process to achieve grain-boundary doping of TiO2 was explored. Spectrophotometry over a wide spectral range (0.05 to 5 eV) was the main tool in probing the mobile electrical charge carriers. The interpretation of these optical measurements required appropriate models. The models developed took many structural properties into account, such as thickness, surface roughness, density, anisotropy and crystalline phase composition. The phase and morphology of the films were analyzed by X-ray diffraction and reflection, scanning probe microscopy, and electron microscopy. The chemical analyses included electron-probe microanalyses, Rutherford backscattering and elastic recoil detection analysis. The DC electrical properties were measured between room temperature and 250 °C. Most water-deposited samples showed semiconducting behavior with an activation energy of the order of 100 meV. The optical measurements revealed a broad absorption band around 1 eV. The absorption coefficient scaled with conductivity. It was successfully modelled as a Lorentzian. Similar absorption bands have been reported for reduced rutile and anatase single crystals. Water-deposited samples containing anatase exhibited a metallic behavior. In these samples the thermal activation energy was reduced to about 30 meV and the charge carriers displayed a high mobility (3 cm2V-1s-1). The infrared absorption band was about 10 times less important than in the samples devoid of anatase. Thin films of TiO2 intercalated with the equivalent of nanometer-thick layers of Ti were prepared. By changing the period in the oxygen supply the grain size, and thereby the film properties, could be modified. The films obtained in this way had many properties in common with water-deposited films. They showed the same absorption band in the infrared, had comparable charge carrier densities and were electrically conductive (102 to 104 Sm-1 at room temperature). To our knowledge, this was the first time that such high electrical conductivities were achieved by sputtering in an oxygen plasma.

EPFL2004

Chargement

Titanium dioxide is a cheap, chemically stable and non-toxic material. However its electrical properties are unstable and it is a modest semiconductor and a mediocre insulator. For several applications it would be interesting to make it either more insulating or more conducting. The goal of this work was to modify the electrical properties of nano-crystalline TiO2 thin films deposited by reactive sputtering and to understand the mechanism leading to these modifications. The principal factors that influence the electrical conductivity are on the one hand the concentration and nature of the chemical impurities incorporated in TiO2, and on the other hand the morphology of the thin films. The study was split into two parts. The fist part describes the modifications of the sputtered material obtained by chemical doping of the TiO2 thin films. Niobium, cerium, iron, and fluorine were incorporated successfully in TiO2. The second part describes the modifications obtained by modifying the reactive gas used during the sputtering process: thus oxygen was substituted with water vapor. Several analysis techniques have been used to characterize the TiO2 thin films. They are essentially divided in four categories. The chemical analyses included electron probe microanalyses, x-ray photoemission spectroscopy, and secondary ion mass spectrometry. The structure and morphology analyses of thin films were carried out with x-ray diffraction and atomic force microscopy. The electrical properties in dc or ac mode were measured between room temperature and 350°C. Finally optical transmission provided information on the electronic states and morphology of the thin films. With an appropriate choice of impurities, titanium dioxide can be made more insulating (TiO2:Ce), more conducting with an n-type electrical conductivity (TiO2:Nb) or p-type electrical conductivity (TiO2:Fe). Chemical doping is also the cause of important structure and morphology changes, for example it can force the transformation from the anatase to the rutile structure. It is shown in particular that dopant atoms generate defects such as oxygen vacancies. These defects impede the variation of the electrical conductivity produced by the impurities, thus, in spite of dopant concentration in the percent range, the variation of the electrical conductivity is an increase or a decrease of three order of magnitude at most when compared with undoped TiO2. Thin films deposited with water vapor as the reactive gas present an increase in the electrical conductivity by height order of magnitude compared to samples prepared with oxygen in similar conditions. No atom other than titanium or oxygen could be detected in the thin films in significant concentration. The dramatic conductivity increase is due to the injection inside TiO2 grains of electrons donated by unsaturated titanium atoms lying on the grain surface. A nanometric grain size is a requirement to make such high doping levels possible. Depending on the impurities or reactive gas selected, titanium dioxide can be made either into a good insulator with a high breakdown field and a high permittivity or into a reasonably conducting, transparent film. The electrical conductivity of the samples prepared for this study cover the range from 10-10 to 103 S m-1.

EPFL1999

Chargement

Hydrothermal Synthesis of SrTiO3: Role of Interfaces

Agnese Carino, Paolo Nanni, Andrea Testino

The hydrothermal synthesis of SrTiO3 in a Sr(OH)(2)/NaOH solution by reaction of four different single crystalline titanium precursors (anatase, rutile, sodium titanate, and hydrogen titanate) having the same nanowire morphology was investigated under stagnant fluid conditions. Owing to the low solubility and dissolution rate of the parent phases, the reaction mainly occurs in a thin interfacial fluid layer. The new phase only grows on the substrate surface, and the morphology evolution is largely controlled by the interface through the coupling of substrate dissolution and SrTiO3 crystallization. The pseudomorphic replacement of the precursor by the product occurs if complete surface coverage is attained. Depending on the crystallographic matching, the parent crystal can either transform in a mesocrystal as happens with anatase via a topochemical transformation or in a polycrystalline product as observed with sodium titanate. In contrast, if the product grows in the form of isolated particles or with dendritic morphology, as in the case of hydrogen titanate and, to a lesser extent rutile, the new compound will not inherit the precursor morphology. When well-defined interfaces are missing, as happens when amorphous titanium hydroxide gel suspensions are used as precursors, the crystallization of SrTiO3 occurs by a completely different pathway, i.e., oriented self-assembly of nanocrystals in mesocrystals.

American Chemical Society2015

Chargement

Free carriers in nanocrystalline titanium dioxide thin films

Simon Springer

EPFL2004

EPFL1999