Publications associées à Memory cell (computing)

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of DRAMs, gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to conventional SRAM. GC-eDRAM achieves high memory density as it relies on a storage cell that can be implemented with as few as ...

IEEE2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Logic-in-memory based on an atomically thin semiconductor

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Ahmet Avsar, Yanfei Zhao, Guilherme Migliato Marega

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020

Blade: An in-Cache Computing Architecture for Edge Devices

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, William Andrew Simon, Yasir Mahmood Qureshi

Area and power constrained edge devices are increasingly utilized to perform compute intensive workloads, necessitating increasingly area and power efficient accelerators. In this context, in-SRAM computing performs hundreds of parallel operations on spati ...

2020

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Robert Giterman, Odem Harel

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

Experimental Demonstration of Supervised Learning in Spiking Neural Networks with Phase-Change Memory Synapses

Irem Boybat Kara, Evangelos Eleftheriou, Abu Sebastian

Spiking neural networks (SNN) are computational models inspired by the brain's ability to naturally encode and process information in the time domain. The added temporal dimension is believed to render them more computationally efficient than the conventio ...

2020

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Giovanni Santoruvo

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

2020

Functionality Enhanced Memories for Edge-AI Embedded Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon, Marco Antonio Rios, William Andrew Simon

With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induced in ...

IEEE2019

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Memory cell (computing)

Gain-Cell Embedded DRAMs: Modeling and Design Space

Distributed Computing with Modern Shared Memory

Gain-Cell Embedded DRAMs: Modeling and Design Space

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Logic-in-memory based on an atomically thin semiconductor

Blade: An in-Cache Computing Architecture for Edge Devices

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Experimental Demonstration of Supervised Learning in Spiking Neural Networks with Phase-Change Memory Synapses

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Functionality Enhanced Memories for Edge-AI Embedded Systems

Graph Chatbot

Chattez avec Graph Search

Gain-Cell Embedded DRAMs: Modeling and Design Space

Distributed Computing with Modern Shared Memory

Gain-Cell Embedded DRAMs: Modeling and Design Space

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Logic-in-memory based on an atomically thin semiconductor

Blade: An in-Cache Computing Architecture for Edge Devices

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Experimental Demonstration of Supervised Learning in Spiking Neural Networks with Phase-Change Memory Synapses

Functionality Enhanced Memories for Edge-AI Embedded Systems

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors