Concept

Épitaxie par jet moléculaire

Publications associées (507)

Photoluminescence from a single InGaAs epitaxial quantum rod

Microphotoluminescence (mu-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaA ...

2008

Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE

Tunable resonant cavity enhanced detectors (RCED) have been realised for the mid-infrared (IR). The bottom mirror as well as the photodiode inside the cavity are based on narrow gap IV-VI materials and grown by molecular beam epitaxy (MBE) on Silicon subst ...

Springer Netherlands2008

Controlling the aspect ratio of quantum dots: From columnar dots to quantum dots

Marco Rossetti, Philipp Ridha

We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrat ...

2008

High doping level in Mg-doped GaN layers grown at low temperature

Nicolas Grandjean, Eric Feltin

We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p ...

2008

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Jelena Ristic

A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...

2008

Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

Marco Rossetti

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear ele ...

2008

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Nicolas Grandjean, Raphaël Butté, Dobri Simeonov

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...

2008

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Daniel Oberli, Pascal Gallo, Nicolas Moret

Significant reduction in inhomogeneous broadening of GaAs/AlGaAs V- groove quantum wires (QWRs) is achieved by growing them on vicinal (001) GaAs substrates misaligned by several degrees with respect to the [1 (1) over bar0] groove direction. Low temperatu ...

American Institute of Physics2008

Tunable resonant cavity enhanced detectors using vertically actuated MEMS mirrors

Niels Quack

Highly sensitive photodetectors for the mid-infrared have recently been obtained by placing a photodiode inside a Fabry-Pérot cavity (Arnold et al 2005 Appl. Phys. Lett. 87 141103). These resonant cavity enhanced detectors (RCED) are sensitive at the res ...

2008

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

Anna Fontcuberta i Morral, Carlo Colombo

Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO2 layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO2 p ...

American Institute of Physics2008

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