Concept

Épitaxie par jet moléculaire

Publications associées (507)

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Anna Fontcuberta i Morral, Sonia Conesa Boj, Emanuele Uccelli

Polarization-dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case ...

2009

Light control and microcavity lasers based on quantum wires integrated in photonic-crystal cavities

Kirill Atlasov

Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...

EPFL2009

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...

2009

Nonmonotonic pseudogap in high-T-c cuprates

Helmuth Berger

The mechanism of high-temperature superconductivity has not been resolved for so long because the normal state of cuprates, which exhibits enigmatic pseudogap phenomena, is not yet understood. We performed careful temperature- and momentum-resolved photoem ...

2009

Dynamics of trion formation in GaAs quantum wells

Benoît Marie Joseph Deveaud, Jean Berney, François Morier-Genoud, Marcia Portella Oberli, Lars Kappei

We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absenc ...

2009

Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

Cyril Cayron

Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grown via the vapour-liquid-solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have bee ...

2009

Registration of long-range surface plasmon resonance by angle-scanning feedback and its implementation for optical hydrogen sensing

Giovanni Dietler

An optical technique devised for the detection of the ultrasharp angular resonance of long-range surface plasmons (LRSPs) is described. The LRSPs propagate along an 8 nm-thick palladium (Pd) film deposited on a one- dimensional photonic crystal structure a ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2009

Interplay of electronic correlations and lattice instabilities in BaVS3

Helmuth Berger

The quasi-one-dimensional metallic system BaVS3 with a metal-insulator transition at T-MI=70 K shows large changes in the optical phonon spectrum, a central peak, and an electronic Raman scattering continuum that evolve in a three-step process. Motivated b ...

2009

Combination of Electron or Laser Beam Irradiation with High Vacuum Chemical Vapor Deposition (HV-CVD) of Al2O3 for in-situ Local Structuring on Wafer Scale Substrate

Patrik Willi Hoffmann, Yury Kuzminykh, Xavier Multone

A laser or electron beam assisted deposition in HV-CVD conditions was used in order to achieve structured amorphous alumina (Al2O3) deposits. Selective deposition of Al2O3 in the irradiated regions has been demonstrated. We investigate the influence of irr ...

ECS - The Electrochemical Society2009

NEMS/CMOS sensor for monitoring deposition rates in stencil lithography

Jürgen Brugger, Andreea Veronica Savu, Marc Antonius Friedrich van den Boogaart

A nanoelectromechanical mass sensor is used to characterize material deposition rates in stencil lithography. The material flux through micron size apertures is mapped with high spatial (below 1 μm) and deposition rate (below 10 pm/s) resolutions by displa ...

Elsevier2009

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