Concept
Médicament radiopharmaceutique
Publications associées (20)
Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...
2020Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3
Alfredo Pasquarello, Assil Bouzid
Formation energies of C, Si, and Ge defects in beta-Ga2O3 are studied through hybrid functional calculations. The interstitial defects of these elements generally occur at higher energies than their substitutional counterparts, but are more stable at low F ...
WILEY-V C H VERLAG GMBH2019