Transistor bipolaire

Résumé

vignette|Vue interne d'un transistor bipolaire de puissance 2N3055 conçu dans les années 1970. vignette|Transistor bipolaire monté en surface. Un transistor bipolaire est un dispositif électronique à base de semi-conducteur de la famille des transistors. Son principe de fonctionnement est basé sur deux jonctions PN, l'une en direct et l'autre en inverse. La polarisation de la jonction PN inverse par un faible courant électrique (parfois appelé effet transistor) permet de « commander » un courant beaucoup plus important, suivant le principe de l'amplification de courant. Il est à noter qu'aucun électron n'est effectivement « créé » : la polarisation appropriée permet à un réservoir d'électrons libres de circuler différemment. Histoire vignette|Réplique du premier transistor bipolaire inventé par les laboratoires Bell en 1947 vignette|Différents types de transistors NPN/PNP La découverte du transistor bipolaire a permis de remplacer efficacement les tubes électroniques dans l

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This research work deals with the design of linear CMOS RF power amplifiers. Two important aspects are treated: efficiency enhancement and frequency-tunable capability. For this purpose, two different integrated circuits were realized in a 0.11 µm technology, each one addressing a different aspect. With respect to efficiency enhancement, a dynamic supply RF power amplifier was realized. The circuit was designed for an operating frequency of 5.2 GHz, but measurements were also performed at 2.4 GHz. The integrated circuit includes a class A amplifier and a high-efficiency, switched-mode modulator. It occupies an area of 1.35 mm2. Two-tone measurement results at 2.4 and 5.2 GHz showed that the system can deliver over 16 dBm (40 mW) linear output power with efficiencies of 22.7% and 12.6%, respectively. Compared to a constant 2.5 V supply operation, the power amplifier operating with the dynamic supply delivers higher linear output power. Moreover, a relative efficiency improvement of a factor of 2.3 at 2.4 GHz and of a factor of 1.6 at 5.2 GHz at low output power levels is achieved. OFDM measurements at 2.4 GHz demonstrated that for an EVM lower than 3% and for an equal output power of 11 dBm (12.6 mW), the absolute improvement in efficiency is over 3.2%. In this work we also propose a tunable impedance matching network for use in multiband RF power amplifiers. This novel network is based on coupled inductors. A frequency-tunable RF power amplifier using this network was designed for operation at 3.7 and 5.2 GHz. Simulation results for the complete system integrated in a CMOS technology showed good results. However, the frequency-tunable behavior could not be observed in the characterization of the integrated circuit because of the low coupling factor of the integrated coupled inductors. A hybrid implementation using the integrated CMOS power amplifier, a discrete commercial RF transformer and a discrete bipolar transistor to control the current in the secondary winding of the transformer was carried out. The circuit was designed for operation at 200 and 300 MHz. The measurements have shown that at 200 MHz a relative improvement in efficiency of a factor of 1.4 was achieved. Moreover, less distortion was generated with the proposed tunable output matching network. The hybrid implementation allowed us to demonstrate the feasibility of the frequency-tunable RF power amplifier based on coupled inductors.

EPFL2009

Chargement

Mon projet consiste à trouver une topologie optimale pour alimenter par induction des périphériques de bureau tel que souris, écran ou clavier. Dans ce projet, nous allons étudier seulement deux topologies d’onduleurs: · Une constituée d’un seul transistor. · Une deuxième composée cette fois-ci de deux transistors.

2009

Chargement

The Cas A-Like Snr 1E 0102.2-7219 In The Small Magellanic Cloud: An Asymmetric Bipolar Explosion

Frédéric Vogt

We have used the Wide Field Spectrograph on the 2.3 m telescope at Siding Spring Observatory to map the [O III] lambda 5007 dynamics of the young oxygen-rich supernova remnant 1E 0102.2-7219 in the Small Magellanic Cloud. From the resultant data cube, we have been able to reconstruct the full three-dimensional structure of the system of [O III] filaments. From this we are able to deduce that the ejecta trace an asymmetric bipolar structure. The redshifted gas contains fainter clumps but with higher velocities than the blueshifted gas. The major axis of the explosion is inclined at similar to 40 degrees to the line of sight. This structure shows that the supernova explosion has been influenced both by the rotation of the progenitor star and, presumably, by a global rotational instability following core collapse.

2010

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EPFL2009