Transistor bipolaire

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Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Mukesh Kumar Tripathi, Yanfei Zhao, Ahmet Avsar, Kristians Cernevics, Zhenyu Wang, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Dynamically crossing diabolic points while encircling exceptional curves: A programmable symmetric-asymmetric multimode switch

Fabrizio Minganti

Nontrivial spectral properties of non-Hermitian systems can lead to intriguing effects with no counterparts in Hermitian systems. For instance, in a two-mode photonic system, by dynamically winding around an exceptional point (EP) a controlled asymmetric-s ...

Nature Portfolio2023

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Jz -Yuan Juo

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

EPFL2023

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Edoardo Charbon, Claudio Bruschini, Won Yong Ha, Myung Jae Lee

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Optica Publishing Group2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Self-Assembly of N-Rich Triimidazoles on Ag(111): Mixing the Pleasures and Pains of Epitaxy and Strain

Christian Wäckerlin, Ulrich Aschauer, Xing Wang, Mehdi Heydari

In the present report, homochiral hydrogen-bonded assemblies of heavily N-doped (C9H6N6) heterocyclic triimidazole (TT) molecules on an Ag(111) substrate were investigated using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) ...

Amer Chemical Soc2023

3D trigonal FAPbI(3)-based multilevel resistive switching nonvolatile memory for artificial neural synapse

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Yong Ding, Li Tao, Yao Zhang, Jun Zhang, Bowen Jiang

Hybrid perovskites have attracted enormous attention in the next generation resistive switching (RS) memristor for the artificial synapses, owing to their ambipolar charge transport, long diffusion length, and tunable visible bandgap. However, the variable ...

WILEY2023

Interface connection of functionalized carbon nanotubes for efficient and stable perovskite solar cells

Mohammad Khaja Nazeeruddin, Jianxing Xia, Ruiyuan Hu

The ionic defects of hetero-junction interfaces always attract and trap carriers via surface electrostatic forces, which are crucial for the efficiency and intrinsic stability of perovskite solar cells (PSCs). Herein, functionalized carbon nanotubes (CNTs) ...

Royal Society of Chemistry2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Feasibility of the EDICAM camera for runaway electron detection in JT-60SA disruptions

The visible camera system EDICAM (Event Detection Intelligent Camera), recently installed on JT-60SA, is simulated to assess whether it can be used for measuring synchrotron radiation from relativistic runaway electrons. In this simulation, the SOFT synthe ...

ELSEVIER SCIENCE SA2023

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Dynamically crossing diabolic points while encircling exceptional curves: A programmable symmetric-asymmetric multimode switch

Fabrizio Minganti

Nature Portfolio2023