Publications associées à Mémoire flash

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

Giovanni De Micheli, Andreas Peter Burg, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Pascal Andreas Meinerzhagen

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories as well as status registers. On the one hand, supply voltage scaling down to the near-threshold (near-VT

Institute of Electrical and Electronics Engineers2014

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Mihai Adrian Ionescu, Wladyslaw Grabinski, Antonios Bazigos, Arnab Biswas, Nilay Dagtekin

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...

American Institute of Physics2014

Determination of effective mechanical properties of a double-layer beam by means of a nano-electromechanical transducer

Tobias Kippenberg, Xiaoqing Zhou, Albert Schliesser

We investigate the mechanical properties of a doubly clamped, double-layer nanobeam embedded into an electromechanical system. The nanobeam consists of a highly pre-stressed silicon nitride and a superconducting niobium layer. By measuring the mechanical d ...

Amer Inst Physics2014

System-level Assessment and Area Evaluation of Spin Wave Logic Circuits

Luca Gaetano Amarù, Odysseas Zografos

Spin Wave Devices (SWDs) are promising candidates for scaling electronics beyond the domain of CMOS. In contrast to traditional charge-based technologies, SWDs rely on propagating oscillation of magnetization as information carrier. Thanks to the intrinsic ...

2014

Finite elements in space and time for the analysis of generalised visco-elastic materials

Karen Scrivener, Cyrille Dunant, Alain Benjamin Giorla

Numerical analysis of linear visco-elastic materials requires robust and stable methods to integrate partial differential equations in both space and time. In this paper, symmetric space-time finite element operators are derived for the first time for elem ...

Wiley-Blackwell2014

Re-writing scheme for solid-state storage devices

Mohammad Amin Shokrollahi, Yuval Cassuto, Luoming Zhang

A multi-level cell flash memory storage device has cells wherein different charge levels represent different information. The storage device can read stored charge from one or more cells, store a rewrite generation value for a group of a plurality of cells ...

2014

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Klaus Kern, Hagen Klauk, Frederik Sebastian Ante

A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin alumin ...

Amer Chemical Soc2014

Majority Logic Synthesis for Spin Wave Technology

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Odysseas Zografos

Spin Wave Devices (SWDs) are promising beyond-CMOS candidates. Unlike traditional charge-based technologies, SWDs use spin as information carrier that propagates in waves. In this scenario, the logic primitive for computation is the majority gate. T ...

2014

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Mémoire flash

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Determination of effective mechanical properties of a double-layer beam by means of a nano-electromechanical transducer

System-level Assessment and Area Evaluation of Spin Wave Logic Circuits

Finite elements in space and time for the analysis of generalised visco-elastic materials

Re-writing scheme for solid-state storage devices

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Majority Logic Synthesis for Spin Wave Technology

Firefly Light Flashing: Oxygen Supply Mechanism

Firefly Light Flashing: Oxygen Supply Mechanism

Graph Chatbot

Chattez avec Graph Search

Re-writing scheme for solid-state storage devices

Majority Logic Synthesis for Spin Wave Technology

Firefly Light Flashing: Oxygen Supply Mechanism

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Firefly Light Flashing: Oxygen Supply Mechanism

Determination of effective mechanical properties of a double-layer beam by means of a nano-electromechanical transducer

Finite elements in space and time for the analysis of generalised visco-elastic materials

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

System-level Assessment and Area Evaluation of Spin Wave Logic Circuits