Publications associées à Electrically-erasable programmable read-only memory

Micro-electro-mechanical (MEM) diode switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

Elsevier2009

Embedded non–volatile memory study with surface potential based model

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Coupling coefficients calculation is known to be a critical issue in embedded Non-Volatile Memory (eNVM) compact modeling. In this paper we have implemented the charge balance method within the Brew’s Charge Sheet Model equation, determining the floating g ...

2009

Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

The floating gate (FG) potential VFG in a non–volatile flash memory (NVM) device is the main parameter controlling the behavior of the cell. A common technique to model VFG is based on the calculation of the coupling coefficients between all the terminals ...

2009

Electroactive micro and nanowells for optofluidic storage

Demetri Psaltis

This paper reports an optofluidic architecture which enables reversible trapping, detection and long term storage of spectrally multiplexed semiconductor quantum dot cocktails in electrokinetically active wells ranging in size from 200nm to 5 mu m. Here we ...

Optical Society of America2009

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography

Jürgen Brugger, Andreea Veronica Savu, Marc Antonius Friedrich van den Boogaart

Non volatile flash memories based on nanoparticles (nps) are one of the identified routes to a further downscaling of future CMOS technology. New features such as Coulomb blockade and quantized charging effects can appear at room temperature only for a lim ...

2008

Fast, quasi-optimal, and pipelined instruction-set extensions

Paolo Ienne, Philip Brisk, Ajay Kumar Verma

Nowadays many customised embedded processors offer the possibility of speeding up an application by implementing it using Application-Specific Functional units (AFUs). However, the AFUs must satisfy certain constraints in terms of read and write ports betw ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

2008

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Nava Setter, Igor Stolichnov, Enrico Colla

Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Electrically-erasable programmable read-only memory

Micro-electro-mechanical (MEM) diode switch

Embedded non–volatile memory study with surface potential based model

Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices

Electroactive micro and nanowells for optofluidic storage

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography

A microprocessor having at least one application specific functional unit and method to design same

Fast, quasi-optimal, and pipelined instruction-set extensions

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Graph Chatbot

Chattez avec Graph Search

Micro-electro-mechanical (MEM) diode switch

Fast, quasi-optimal, and pipelined instruction-set extensions

KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Analytical and compact models of the ONO capacitance in embedded non-volatile flash devices

Embedded non–volatile memory study with surface potential based model

Electroactive micro and nanowells for optofluidic storage

A microprocessor having at least one application specific functional unit and method to design same