Publications associées à Silicon nanowire

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extrem ...

Institute of Physics2016

Nanowire-Aperture Probe: Local Enhanced Fluorescence Detection for the Investigation of Live Cells at the Nanoscale

Anna Fontcuberta i Morral, Esther Alarcon Llado

Fluorescence microscopy has tackled many of the burning questions in cellular biology. Probing low-affinity cellular interactions remains one of the major challenges in the field to better understand cellular signaling. We introduce a novel approach the na ...

Amer Chemical Soc2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Dmitry Mikulik, William Craig Carter, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Jelena Vukajlovic Plestina

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Surface trap mediated electronic transport in biofunctionalized silicon nanowires

Giovanni De Micheli, Sandro Carrara, Francesca Puppo, Massimiliano Di Ventra

Silicon nanowires (SiNWs), fabricated via a top-down approach and then functionalized with biological probes, are used for electrically-based sensing of breast tumor markers. The SiNWs, featuring memristive-like behavior in bare conditions, show, in the pr ...

2016

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Surface States Transport in Topological Insulator Bi0.83Sb0.17 Nanowires

Jean-Philippe Ansermet

We investigate the transport properties of topological insulator (TI) nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 m are prepared using high frequency liquid phase casting in a glass capillary; cylindrical single crys ...

Springer Verlag2016

Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

Carlotta Guiducci, Enrico Accastelli, Paolo Scarbolo, Pierpaolo Palestri, Luca Selmi, Thomas Ernst

The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-g ...

Mdpi Ag2016

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

Yusuf Leblebici, Zuhal Tasdemir

Three-point bending tests were performed on double-anchored, < 110 > silicon nanowire samples in the vacuum chamber of a scanning electron microscope ( SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35nm a ...

Hindawi Limited2016

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Silicon nanowire

Growth of GaAs nanowires on Si (111) for photovoltaic applications

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Nanowire-Aperture Probe: Local Enhanced Fluorescence Detection for the Investigation of Live Cells at the Nanoscale

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Surface trap mediated electronic transport in biofunctionalized silicon nanowires

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Surface States Transport in Topological Insulator Bi0.83Sb0.17 Nanowires

Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

Graph Chatbot

Chattez avec Graph Search

Nanowire-Aperture Probe: Local Enhanced Fluorescence Detection for the Investigation of Live Cells at the Nanoscale

Growth of GaAs nanowires on Si (111) for photovoltaic applications

Surface trap mediated electronic transport in biofunctionalized silicon nanowires

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Surface States Transport in Topological Insulator Bi0.83Sb0.17 Nanowires

Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping