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Silicon nanowire

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Gold-free Growth of InAs Nanowires

Heidi Andrea Potts

Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectronic applications, and they provide an excellent platformto probe fundamental physical effects. For the realization of nanowire based devices, a deep understa ...

EPFL2017

Top-Down Technique for Scaling toNnano in Silicon MEMS

Yusuf Leblebici, Zuhal Tasdemir, Mustafa Yilmaz, Yasin Kilinc

Nanoscale building blocks impart added functionalities to microelectromechanical systems (MEMS). The integration of silicon nanowires with MEMS-based sensors leading to miniaturization with improved sensitivity and higher noise immunity is one example high ...

American Vacuum Society2017

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Ale,Ga)N core-shell nanowires

Anna Fontcuberta i Morral, Luca Francaviglia

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core is a pr ...

Royal Society of Chemistry2017

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Royal Society of Chemistry2017

Nanowires of organic-inorganic perovskites

László Forró, Endre Horvath, Massimo Spina

An organic-inorganic perovskite CH3NH3PbI3 nanowire showing a length-width aspect ratio from 5-400 up to 109 and a width-height ratio of 1-100 up to 1-10000. Further, the invention is embodied as a process for making the nanowire wherein at least a polar a ...

2017

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Maxime Lagier, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Jelena Vukajlovic Plestina

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

2017

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

2017

GaAs nanowires: from doping to plasmonic hybrid devices

Alberto Casadei

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Federico Matteini, Heidi Andrea Potts, Jean-Baptiste Leran, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Federico Matteini, Heidi Andrea Potts, Jean-Baptiste Leran, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Institute of Physics2016

Top-Down Technique for Scaling toNnano in Silicon MEMS

Yusuf Leblebici, Zuhal Tasdemir, Mustafa Yilmaz, Yasin Kilinc

American Vacuum Society2017

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Ale,Ga)N core-shell nanowires

Anna Fontcuberta i Morral, Luca Francaviglia

Royal Society of Chemistry2017