Concept

Luminescence optiquement stimulée

Publications associées (39)

Characterization of near edge optical transitions in undoped and doped GaN/sapphire grown by MOVPE, HVPE and GSMBE

We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account ...

Materials Research Society1997

Time resolved photoluminescence from a semiconductor microcavity - Temperature dependence and role of leaky modes.

Vincenzo Savona, Paolo Schwendimann

Time resolved photoluminescence in semiconductor microcavities in the strong coupling regime both for non-resonant and resonant excitation is modeled by considering scattering of exciton polaritons by acoustic phonons. Rise time and decay time of the lumin ...

KLUWER ACADEMIC PUBL, 101 PHILIP DRIVE, NORWELL, MA 020611996

Nonequilibrium dynamics of free quantum-well excitons in time-resolved photoluminescence

Vincenzo Savona, Paolo Schwendimann

Scattering rates of quantum-well excitons by acoustic phonons are calculated using realistic deformation potentials for electrons and holes in structures based on GaAs. These fates are used in order to reproduce the exciton dynamics in a time-resolved phot ...

1996

Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an n(+)-InP substrate

Jean-Daniel Ganière

We examine the room-temperature dispersive and non-dispersive cathodoluminescent (CL) signals produced by an n-InP/n(+)-InP homojunction as a function of excitation beam energy. The non-intentionally doped epilayer of the homojunction is thick enough (2.5 ...

1996

Effect of the scattering by phonons on the temperature dependence of the free QW exciton radiative lifetimes.

Vincenzo Savona, Paolo Schwendimann

We calculate scattering rates of QW excitons by acoustic phonons using realistic deformation potentials for electrons and holes in structures based on GaAs. We use these rates in order to reproduce the exciton dynamics in a time-resolved photoluminescence ...

1995

Saturation and Losses in an Optical Semiconductor Quantum-Well Amplifier

The results obtained from luminescence measurements made on one-dimensional optical amplifiers are reviewed. The investigated samples are GaAs/(Ga, Al)As waveguiding structures containing a multiple quantum well structure as active element. The experimenta ...

1995

Luminescence Peculiarities on (Alga)as Single Quantum-Well

Franz-Karl Reinhart, Jean-Daniel Ganière

This paper reports on single quantum well characterization by means of luminescence excited with a laser (photoluminescence) and an electron beam (cathodoluminescence) at liquid helium temperatures. Small quantum well regions with smaller confinement were ...

1992

Luminescence and TEM-investigation of laser induced defects in (Al,Ga)As heterostructures

René Salathé, Jean-Luc Martin, Franz-Karl Reinhart

Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM ...

Mater. Res. Soc1985

Luminescence of laser irradiated (Al,Ga)As-multilayer structures

René Salathé

A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed ...

IOP1981

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