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The results obtained from luminescence measurements made on one-dimensional optical amplifiers are reviewed. The investigated samples are GaAs/(Ga, Al)As waveguiding structures containing a multiple quantum well structure as active element. The experimenta ...
We calculate scattering rates of QW excitons by acoustic phonons using realistic deformation potentials for electrons and holes in structures based on GaAs. We use these rates in order to reproduce the exciton dynamics in a time-resolved photoluminescence ...
Scattering rates of quantum-well excitons by acoustic phonons are calculated using realistic deformation potentials for electrons and holes in structures based on GaAs. These fates are used in order to reproduce the exciton dynamics in a time-resolved phot ...
Time resolved photoluminescence in semiconductor microcavities in the strong coupling regime both for non-resonant and resonant excitation is modeled by considering scattering of exciton polaritons by acoustic phonons. Rise time and decay time of the lumin ...
KLUWER ACADEMIC PUBL, 101 PHILIP DRIVE, NORWELL, MA 020611996
Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM ...
A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed ...
This paper reports on single quantum well characterization by means of luminescence excited with a laser (photoluminescence) and an electron beam (cathodoluminescence) at liquid helium temperatures. Small quantum well regions with smaller confinement were ...
We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account ...
We examine the room-temperature dispersive and non-dispersive cathodoluminescent (CL) signals produced by an n-InP/n(+)-InP homojunction as a function of excitation beam energy. The non-intentionally doped epilayer of the homojunction is thick enough (2.5 ...