Concept
Phosphure d'indium
Publications associées (112)
Photodynamic treatment of multidrug-resistant bacterial infection using indium phosphide quantum dots
Francesco Stellacci, Inyoung Yonah Lee
Infections caused by multidrug-resistant (MDR) bacteria pose an impending threat to humanity, as the evolution of MDR bacteria outpaces the development of effective antibiotics. In this work, we use indium phosphide (InP) quantum dots (QDs) to treat infect ...
ROYAL SOC CHEMISTRY2022Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices
Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Raphaël François Lemerle, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin
III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...
AMER CHEMICAL SOC2022Structure-property relationships and mixed conductivity in layered hybrid perovskites based on phenyl-derived spacers
Hybrid halide perovskites are currently one of the most studied semiconductors. However, due to poor intrinsic and extrinsic stability, further developments to commercialize devices based on hybrid halide perovskites are limited. Many different strategies ...
EPFL2022Stable Al 2 O 3 Encapsulation of MoS 2 ‐FETs Enabled by CVD Grown h‐BN
Aleksandra Radenovic, Andras Kis, Zhenyu Wang
Molybdenum disulfide (MoS2) has great potential as a two-dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents and charge transfer from neighboring dielectrics can lead to device varia ...
2022Electron Trap Dynamics in Polymer Light-Emitting Diodes
Frank Nüesch, Roland Hany, Michael Bauer, Matthias Diethelm, Wei-Hsu Hu
Semiconducting polymers are being studied intensively for optoelectronic device applications, including solution-processed light-emitting diodes (PLEDs). Charge traps in polymers limit the charge transport and thus the PLED efficiency. It is firmly establi ...
WILEY-V C H VERLAG GMBH2022Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...
AMER CHEMICAL SOC2021Electrically pumped shot-noise limited class A VECSEL at telecom wavelength
Elyahou Kapon, Alexandru Mereuta, Andrei Caliman
Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption an ...
2021Novel photoelectric material of perovskite-like (CH3)(3)SPbI3 nanorod arrays with high stability
Mohammad Khaja Nazeeruddin, Wei Liu, Ruiyuan Hu, Shanshan Xiao
Organometallic halide perovskite materials make great achievements in optoelectronic fields, especially in solar cells, in which the organic cations contain amine components. However, the amine with N-H bonds is easily hydrolyzed with moisture in the air, ...
2021The Role of Alkyl Chain Length and Halide Counter Ion in Layered Dion−Jacobson Perovskites with Aromatic Spacers
Jacques-Edouard Moser, Jovana Milic, Joachim Maier, Michael Allan Hope, George Cameron Fish, Algirdas Ducinskas, Loï Charles Carbone, Davide Moia
Layered hybrid perovskites based on Dion−Jacobson phases are of interest to various optoelectronic applications. However, the understanding of their structure−property relationships remains limited. Here, we present a systematic study of Dion−Jacobson pero ...
2021Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller
Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...
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