Lampe à incandescence halogène

Résumé

Une lampe à incandescence halogène produit de la lumière de la même façon qu'une lampe à incandescence, en portant à incandescence un filament de tungstène, mais dans une petite ampoule en verre de quartz remplie de gaz halogénés (iode et brome) à basse pression. Cette ampoule fonctionne à de hautes températures où la convection des gaz halogènes permet la régénération en continu du filament, au moins partiellement, ce qui augmente la durée de vie de l'ampoule. Chronologie

1878 : Joseph Swan invente la lampe à incandescence pour laquelle il reçoit un brevet en 1878. Sa maison (à Gateshead, Angleterre) est la première dans le monde à être éclairée par une ampoule électrique ;
1879 : Thomas Edison après l'invention de Joseph Swan, dépose le brevet de l'ampoule électrique à base de filament en bambou du Japon sous faible tension dans une ampoule de verre sous vide ;
1882 : Edwin A. Scribner brevette une lampe à filament carbone utilisant du chlore pour prévenir l'ass

Source officielle

https://fr.wikipedia.org/wiki/Lampe_%C3%A0_incandescence_halog%C3%A8ne

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AN HYBRID LED/HALOGEN LARGE-AREA SOLAR SIMULATOR ALLOWING FOR VARIABLE SPECTRUM AND VARIABLE ILLUMINATION PULSE SHAPE

Christophe Ballif, Matthieu Despeisse

Commercial large-area solar simulators are principally in the form of Xenon flashers, which intrinsically have a short flash duration time, typically 100 ms at low spectrum quality and 10 ms at high spectrum quality. This implies measurement time constraints not adapted to the characterization of new generations of photovoltaic modules such as high-efficiency crystalline silicon modules, which can exhibit transient effects leading to measurement artifacts [1]. Moreover, thin film technologies require a high spectral match and possibly a variable spectrum of the illumination source for the accurate power-rating of multi-junctions based solar modules. An alternative large-area solar simulator solution is proposed for the power rating and the diagnostic of such generations of solar modules. The developed simulator makes use of a combination of different power LEDs and halogen lamps in a particular matrix configuration, integrated into a 1 m × 1 m table with mirrors. The constructed prototype demonstrates an AAA classification according to the IEC norms [2], allows for long illumination (200 ms to continuous) and permits controlled variation of the spectrum and of the intensity of the illumination.

Valencia, Spain2010

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A ratiometric fluorescence sensor for caffeine

Laurane Favre, Nicolas David Gaeng, Nicolas Luisier, Albert Ruggi, Kay Severin

The dye disodium 3,4:3’,4’-bibenzo[b]thiophene-2,2’-disulfonate can be used as molecular probe for the fluorimetric detection of caffeine in aqueous solution. The fluorescence response is attributed to non-covalent interactions of caffeine with the dye in the ground state and in the excited state. The bimodal interaction allows performing ratiometric measurements with very good selectivity over structurally related analytes. The dye was also used to develop a simple test strip for the visual differentiation of normal and decaffeinated coffee with a standard UV lamp.

Royal Society of Chemistry2012

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Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical mechanisms during platinum etching by a dual frequency ECR/RF reactor have been investigated. An ion beam was generated by means of a 50 mm diameter ECR-gun directed towards the substrate. The latter was placed on a RF powered electrode for discharging and local activation of reactive gas species. The removal characteristics of blanket platinum films and platinum films with a patterned mask (photoresist or SiO2 masks) were investigated as a function of gas chemistry (Ar, halogen gases), ion beam energy (ion extraction/acceleration voltages), substrate bias RF power and working pressure (from 5 x 10(-3) Pa to 5 x 10(-1) Pa). The platinum etch process was characterized in terms of etch rate, selectivity, critical dimension, lateral uniformity and mask stability. A high rate etching processes (up to 100 nm/min with SiO2 mask and 25 nm/min with removable photoresist) were obtained for micron scale patterns. Patterning of a complete layer stack PZT/Pt/SiO2 could be achieved with a single photolithography step.

1999

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