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Robert H. Dennard

Résumé
Robert Heath Dennard (born September 5, 1932) is an American electrical engineer and inventor. Biography Dennard was born in Terrell, Texas, U.S. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines. In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. It became the basis for today's dynamic random-access memory (DRAM). Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 postulated that MOSFETs continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy effici
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