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Publications associées (79)

Development of high band gap protocrystalline material for p-i-n thin film silicon solar cells

High band gap thin film silicon solar cells are of high interest for the use as top cell in triple junctions solar cells. Protocrystalline silicon, in the transition phase between amorphous and microcrystalline silicon, is such a high band gap material. Du ...

2012

Analysis of selected Phenix EOL tests with the FAST code system - Part II: Unprotected phase of the Natural Convection Test

Rakesh Chawla, Konstantin Mikityuk, Aurélia Chenu

Experimental results from the unprotected phase of the Natural Convection (NC) Test performed in the Phenix reactor in the frame of end-of-life (EOL) experiments have been used to qualify the FAST code system for Sodium-cooled Fast Reactor (SFR) transient ...

Elsevier2012

A current-mode back-end for a sensor microsystem

Maher Kayal, Marc Pastre, Andrea Ajbl

is paper presents a voltage-to-current converter as a current-mode output buffering stage for sensor interfaces. The converter can be used in any microsystem needing a current output. It is presented here in the context of a Hall sensor microsystem. The sy ...

IEEE2011

Scan-Rate-Dependent Ion Current Rectification and Rectification Inversion in Charged Conical Nanopores

Hubert Girault, Dmitry Momotenko

Herein we report a theoretical study of diode-like behavior of negatively charged (e.g., glass or silica) nanopores at different potential scan rates (1-1000 V center dot s(-1)). Finite element simulations were used to determine current-voltage characteris ...

2011

Lukasiewicz fuzzy logic networks and their ultra low power hardware implementation

Rafal Tomasz Dlugosz

In this paper, we propose a new category of current-mode Łukasiewicz OR and AND logic neurons and ensuing logic networks along with their ultra-low power realization. The introduced circuits can operate in a wide range of the input signals varying in-betwe ...

Elsevier2010

A Novel 1V, 24μW, ∑∆ Modulator Using Amplifier & Comparator Based Switched Capacitor Technique, with 10-kHz Bandwidth and 64dB SNDR

Pierre-André Farine, Steve Tanner, Shafqat Ali

A new technique, Amplifier and Comparator Based Switched Capacitor (ACBSC) for low voltage switched cap circuits, is presented. ACBSC combines the recently introduced CBSC (comparator based switched capacitor circuit) with an amplifier. The current sources ...

2010

Microcrystalline silicon solar cells: effect of substrate temperature on cracks and their role in post-oxidation

Christophe Ballif, Thomas Söderström, Martin Python

Microcrystalline silicon (mc-Si:H) cells can reach efficiencies up to typically 10% and are usually incorporated in tandem micromorph devices. When cells are grown on rough substrates, ‘‘cracks’’ can appear in the mc-Si:H layers. Previous works have demons ...

2010

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Low-conductivity doped layers for improved performance of thin film silicon solar cells on highly textured substrate

Christophe Ballif, Corsin Battaglia, Matthieu Despeisse, Mathieu Gérard Boccard, Grégory Bugnon, Thomas Söderström, Michael Elias Stückelberger, Gaetano Parascandolo, Peter Cuony, Fanny Sculati-Meillaud, Simon Hänni, Adrian Billet, Mathieu Charrière, Nils Linus Löfgren

The performances of thin film silicon solar cells are reported for the use of increasingly rough zinc-oxide (ZnO) front electrodes. Experimental results show that textured substrates favor increased light trapping but also the local creation of undesired c ...

2010

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper we report the fabrication and detailed electrical characterization of a ferroelectric transistor (Fe-FET) aiming at the extraction of its physical threshold voltage. The investigated transistors are fabricated on doped bulk silicon with a gat ...

2010

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