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High temporal resolution transmission electron microscopy techniques have shown significant progress in recent years. Using photoelectron pulses induced by ultrashort laser pulses on the cathode, these methods can probe ultrafast materials processes and ha ...
The integration of ultrafast laser systems with transmission electron microscopes led to the extension of conventional electron microscopy (PINEM) to the 4th dimension, time, and new techniques as photon-induced near-field electron microscopy became availa ...
Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007
The CLIC Test Facility 3 (CTF3) drive beam injector should provide high intensity and high quality electron beams. The present installation relies on a thermionic gun followed by a complexRF bunching system. As an upgrade to improve the beam emittance and ...
We theoretically and experimentally investigate a band edge Photonic Crystal (PhC) Quantum Cascade Laser (QCL) operating at 3.1 THz. The surface emission is achieved by using a second-order Bragg grating at the PhC tile boundaries. Highly directional surfa ...
This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...
Carrier transport and capture paths via barriers of different dimensionality in AlGaAs/GaAs quantum wire (QWR)/quantum dot (QD) heterostructures, grown in inverted pyramids, are studied by photoluminescence (PL) spectroscopy. Evidence for thermally activat ...
In the last decade the power consumption of electronic devices has increased for both static and active components. Following the Dennard's scaling rule, as long as the transistor sizes are reduced then the supply voltage (VDD) can also be scaled in order ...
Nowadays the orientation maps of polycrystalline material are necessary for a better understanding of, for example, the formation of voids in the interconnects of modern electronic devices. As new generation of devices has dramatically reduced in size, new ...
We have simulated short channel carbon nanotube field-effect transistors with asymmetric source and drain contacts using a Coupled mode space approach within the non-equilibrium Green's function framework. The simulated results show that the asymmetric con ...
