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We report on the structural, magnetic, optical and transport properties of As-doped Zn0.9Co0.1O thin films. X-ray diffraction indicates highly (0 0 0 1) textured samples free of secondary phases. Transmission UV-Vis spectroscopy shows that Co is in the +2 ...
Basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual valu ...
Photoinduced electron transfer from the valence band of nanocryst. NiO, a p-type semiconductor, to an excited bound dye, Coumarin 343, and the subsequent recombination have been measured by femtosecond transient absorbance spectroscopy probing with white l ...
Localization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic press ...
By using pyran-containing donor-acceptor dyes as doping molecules in organic light-emitting devices (OLEDs), we scrutinize the effects of charge trapping and polarization induced by the guest molecules in the electro-active host material. Laser dyes 4-(dic ...
Mesoscopic injection solar cells operate in an entirely different fashion than conventional solar p‐n junction devices. Mimicking the principles that natural photosynthesis has used successfully over the last 3·5 billion years in solar energy conversion, t ...
Vertical Hall sensors are capable of measuring surface-parallel components of the magnetic field. They allow therefore relatively easy conception of single-chip multi-axial magnetic sensors compared to solutions using horizontal Hall plates. The modern tre ...
Tunnelling experiments have played an essential role in the development and verification of theories for superconductivity. They are usually interpreted within the so-called semiconductor model, in which the tunnelling current is given by the convolution o ...
We study the effect of spin-flip scattering on the density of states in a long diffusive S-N junction with transparent interface. We calculate the critical value of the spin-flip scattering rate at which the minigap closes and give the dependence of the mi ...
Highly selective oxidation of an AlInN interlayer buried in a GaN matrix is demonstrated. This technique was successfully applied to form current apertures in III-nitride light-emitting diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitax ...
