Concept

Jonction p-n

Publications associées (320)

Importance of Quasi-Saturation Effect in the Bipolar Junction of High Voltage NPT- IGBTs for power calculations

During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...

2001

Nuclear microprobe analysis of GaN based light emitting diodes

Nicolas Grandjean

The aim of this work is to describe the structure and the composition of light emitting diode (LED) chips from Rutherford Backscattering Spectroscopy and Particle Induced X-ray Emission measurements performed with a 2 MeV He-4(+) micro-beam focused down to ...

2001

Direct observation of longitudinal spatial hole burning in semiconductor optical amplifiers with injection

Benoît Marie Joseph Deveaud, Marc-André Dupertuis, Daniel Marti, Lars Kappei

Measurements of spontaneous emission from InGaAsP semiconductor optical amplifiers provide information on both the carrier density and temperature. By spatially resolving the light emitted along the active layer of the device, we find evidence of longitudi ...

2001

Oscillator strengths of charged excitons: combining magnetoabsorption and photoluminescence dynamics in semimagnetic quantum wells

Benoît Marie Joseph Deveaud, Victoria Ciulin

We present a systematic study of the oscillator strength of the positively charged excitons (X+) in Cd1-xMnxTe quantum wells. CW-absorption and time-resolved photoluminescence measurements were combined as two approaches for the determination of the oscill ...

2000

Interface states at semiconductor junctions

Giorgio Margaritondo

The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...

1999

Acceptor dopant effects on endurance of PZT thin films

Nava Setter

The effect of acceptor (Na, Mg, Fe) and donor (Nb,Ta) dopants on the switching properties of Pb(Zr0.53Ti0.47)O-3 (PZT) thin films with Pt electrodes was investigated for broad dopant concentration ranges. The effect of dopants on endurance was found to be ...

1999

Effects of background n- and p-type doping on Zn diffusion in GaAs AlGaAs multiple-quantum-well structures

Benoît Marie Joseph Deveaud, Franz-Karl Reinhart, Jean-Daniel Ganière

The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped, Be-dop ...

1999

Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

Nicolas Grandjean

Si- and Mg-doped GaN layers were grown on c-plane sapphire substrates by molecular beam epitaxy with NH3 as the nitrogen precursor. Their optical and electrical properties were investigated by photoluminescence experiments and Hall measurements, respective ...

1998

Pulsed laser deposition for in-situ photoemission studies on YBa2Cu3O7-delta and related oxide films

Giorgio Margaritondo, Marco Grioni, Davor Pavuna

We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-delta (YB ...

Spie - Int Soc Optical Engineering1998

Pulsed laser deposition for in-situ photoemission studies on YBa2Cu3O7-δ and related oxide films

Giorgio Margaritondo, Davor Pavuna

1998

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