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a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect dens ...
The small signal rf impedance of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-/spl delta// step edge junction rf SQUIDs operating in a strongly nonhysteretic mode has been measured. The phase dependent inductance L/sub J/(/spl phi/) and the current phase relation I/s ...
Institute of Electrical and Electronics Engineers1995
We investigate, experimentally and theoretically, the optical amplification and its saturation in a mirrorless semicondctor quantum well laser. We optically excite a narrow stripe of variable length and measure the profiles of spontaneous and stimulated lu ...
The interpretation of photoemission-spectromicroscopy studies of Au on GaSe requires a revision of established ideas about this interface, which has long been considered a prototype of Schottky-like systems. We find that the interface-formation process inv ...
We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures using numerical modeling to optimize the band structure. The main improvement was achieved by including i,n,i,p-doped layers in the barrier, thus decoupling th ...
The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal- ...
The Schottky-barrier formation of the Au/GaP (110) interface has been investigated by photoemission, in the presence of large surface photovoltage effects induced by the intense photon beam of a synchrotron-radiation source. The surface photovoltage has be ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a m ...
Reasonable consistency between experimental data for the ambipolar diffusion length and experimental data for the photoconductivity is demonstrated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the ''standa ...
