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Publications associées (64)

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V-BR) and low ON-resistance (R-ON). The multi-channel structure was judiciously designed to yield a small sheet resistance (R-s) of 80 Omega/sq using only four 2DEG channels ...

IEEE2019

Semiconductor device comprising a three-dimensional field plate

Elison de Nazareth Matioli, Jun Ma

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

2018

Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

Herbert Shea, Samuel Rosset, Samuel Schlatter, David James McCoul

Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety ...

Institute of Physics2017

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Elison de Nazareth Matioli, Jun Ma

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

2017

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

Edoardo Charbon, Myung Jae Lee, Qi Guo

We investigate the radiation effects on single-photon avalanche diodes (SPADs) fabricated in CMOS technology. For this investigation, a high-performance SPAD based on a vertical p-i-n construction with buried-N layer is proposed and used for the characteri ...

2017

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

2017

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017

Wire EDM Monitoring for Zero-Defect Manufacturing based on Advanced Sensor Signal Processing

Paul Xirouchakis, Roberto Pérez

In the framework of zero-defect manufacturing, an advanced sensor monitoring procedure aimed at detecting the process conditions leading to surface defects in Wire Electrical Discharge Machining (WEDM) is proposed. WEDM experimental tests were carried out ...

Elsevier Science Bv2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015

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