Concept

Static Random Access Memory

Publications associées (235)

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Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of DRAMs, gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to conventional SRAM. GC-eDRAM achieves high memory density as it relies on a storage cell that can be implemented with as few as ...

IEEE2020

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Logic-compatible gain-cell embedded DRAM (GC-eDRAM) is an emerging alternative to conventional SRAM for memory-dominated system-on-chip (SoC) designs due to its high-density, low-power, and two-ported operation. Although GCs have a limited data retention t ...

IEEE2019

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

A machine learning approach for power gating the FPGA routing network

Mirjana Stojilovic, Hossein Asadi

Power gating is a common approach for reducing circuit static power consumption. In FPGAs, resources that dominate static power consumption lie in the routing network. Researchers have proposed several heuristics for clustering multiplexers in the routing ...

IEEE COMPUTER SOC2019

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Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to conventional SRAM due to its high-density, low-leakage, and inherent two-ported functionality. However, its dynamic storage mechanism requires power-hungry refresh cycles to maintain data. ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Improving Main-memory Database System Performance through Cooperative Multitasking

Georgios Psaropoulos

Database systems access memory either sequentially or randomly. Contrary to sequential access and despite the extensive efforts of computer architects, compiler writers, and system builders, random access to data larger than the processor cache has been s ...

EPFL2019

JESD204B Compliant 12.5 Gb/s LVDS and SST Transmitters in 28 nm FD-SOI CMOS

Andreas Peter Burg, Seyed Armin Tajalli, Yusuf Leblebici, Firat Çelik, Ayça Akkaya

JESD204B compliant low-voltage differential signaling (LVDS), and source-series-terminated (SST) transmitters in 28 nm FD-SOI CMOS technology are presented with 1.1 pJ/bit and 1.7 pJ/bit at 12.5 Gb/s, respectively. An external 6.25 GHz single-ended clock, ...

IEEE2019

In Search of Lost Bandwidth: Extensive Reordering of DRAM Accesses on FPGA

Paolo Ienne, Mikhail Asiatici, Gabor Andras Csordas

For efficient acceleration on FPGA, it is essential for external memory to match the throughput of the processing pipelines. However, the usable DRAM bandwidth decreases significantly if the access pattern causes frequent row conflicts. Memory controllers ...

IEEE COMPUTER SOC2019

Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers

Georg Fantner, Jens Anders

In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise ...

IEEE2019

Bridging the Latency Gap between NVM and DRAM for Latency-bound Operations

Anastasia Ailamaki, Georgios Psaropoulos

Non-Volatile Memory (NVM) technologies exhibit 4× the read access latency of conventional DRAM. When the working set does not fit in the processor cache, this latency gap between DRAM and NVM leads to more than 2× runtime increase for queries dominated by ...

ACM2019