Polymère conducteur | EPFL Graph Search

La plupart des polymères organiques produits sont d'excellents isolants électriques. Les polymères conducteurs, ou plus précisément polymères conducteurs intrinsèques (PCI), presque toujours organiques, possèdent des liens délocalisés (souvent dans un groupe aromatique) qui forment une structure similaire à celle du silicium. Quand on applique une tension entre les deux bandes, la conductivité électrique augmente : c'est un transistor. Presque tous les polymères conducteurs connus sont des semi-conducteurs grâce à leur structure en bandes, alors que les polymères à pas zéro (⇔ merci d’apporter votre expertise, et de préciser) se comportent comme les métaux, en conducteurs. La principale différence entre les polymères conducteurs et les semi-conducteurs inorganiques est la mobilité des électrons, jusqu'à récemment bien inférieure au sein des polymères conducteurs - un fossé que la science ne cesse de réduire. Outre leurs intérêts en chimie fondamentale, ces recherches ont donné naissa

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high-integration density, but also to replace thin-film transistors in large-area electronics. This thesis investigates the use of wet-chemically grown ZnO nanowires for the fabrication of high-performance, low-voltage field-effect transistors (FETs). The first part of this thesis addresses the electrical characteristics of the wet-chemically grown ZnO nanowires. The as-grown ZnO nanowires are highly conductive due to a large charge-carrier concentration caused by dopants unintentionally incorporated into the ZnO nanowires during the synthesis. This large charge-carrier concentration makes it difficult to modulate the conductivity of the nanowires by an external electric field, so that the as-grown wires are not suitable for FETs. A post-growth annealing step is employed to dramatically reduce the charge-carrier concentration of the nanowires which makes it possible to fabricate FETs with useful characteristics. ZnO-nanowire FETs in a global back-gate geometry based on annealed ZnO nanowires have a transconductance of 300 nS, an on/off current ratio of 107 and a subthrehold slope of 500 mV/decade. The maximum field-effect mobility of the annealed ZnO nanowires is around 50 cm2/Vs. An important requirement to obtain good FET characterisitcs is to minimize the influence of the source and drain contact resistance on the total device resistance. The material used for the source and drain contacts in this thesis is aluminum. It is demonstrated that the use of a plasma treatment in the contact regions prior to the evaporation of the aluminum contacts can greatly influence the contact properties between ZnO and aluminum. An argon-plasma treatment locally increases the charge-carrier concentration in the ZnO. It is shown that the doping effect of the argon-plasma treatment can be exploited to reduce the contact resistance between alumiunm and ZnO and improve the electrical performance of the FETs. In the second part of this thesis, the influence of the ambient air on the electrical characteristics of the ZnO-nanowire FETs is investigated. The electrical conductivity of the FETs is strongly affected by the distinct atmospheric conditions, which makes it difficult to obtain reliable FET characteristics. The potential of a self-assembled monolayer (SAM) based on fluoroalkylphosphonic acid molecules to passivate the ZnO nanowires against the undesirable effects of the ambient and to stabilize the electrical performance of ZnO-nanowire FETs is demonstrated. The stabilizing effect is attributed to the formation of a densely packed, hydrophobic SAM on the surface of ZnO and aluminum oxide. The quality of the hydrophobic SAMs is confirmed by means of water-contact-angle measurements on SAM-covered ZnO single crystals that show a contact angle of more than 110°. The third part of this thesis is dedicated to the fabrication of high-performance ZnO-nanowire FETs with patterned metal top-gate electrodes. A top-gate fabrication process is developed that uses a very thin gate dielectric consisting only of an alkylphosphonic acid SAM that can be deposited from solution. The insulating quality of the SAM is investigated for top-gate FETs that utilize either gold or aluminum for the top-gate electrode. Gold top-gate FETs show a transconductance of 1 µS, an on/off current ratio of 107, and a steep subthreshold slope of 90 mV/decade. The thin gate dielectric makes it possible to operate the gold top-gate FETs at low voltages of 1 V and simultaneously reduces the undesired gate current by more than three orders of magnitude compared to gold top-gate FETs that have been fabricated without a gate dielectric (MESFETs). The gate current of the gold top-gate FETs with SAM gate dielectric is as low as 1 pA for gate-source voltages between -1 V and 0.5 V. When aluminum is used for the top-gate electrode, a hybrid dielectric is formed at the interface between the SAM and the aluminum, consisting of the SAM and a spontaneously formed aluminum oxide layer. Owing to the hybrid gate dielectric, the aluminum top-gate FETs are operated with gate currents below 1 pA for voltages up to 3 V. The top-gate fabrication process does not require temperatures above 160 °C, which makes it possible to fabricate FETs on unconventional substrates that cannot tolerate high temperatures, such as glass or flexible plastics. Integrated circuits on single ZnO nanowires that are fabricated on glass and plastic substrates are demonstrated. The maximum switching frequency of the inverters is 1 MHz.

EPFL2011

Free carriers in nanocrystalline titanium dioxide thin films

Simon Springer

This thesis analyzes the properties of heavily doped nanocrystalline titanium dioxide. Thin films were deposited by magnetron sputtering with either water vapor as reactive gas or a periodically interrupted oxygen supply. The samples were at the same time electrically conducting and transparent. They consisted of mixtures of rutile, anatase and amorphous phases. Titanium dioxide is chemically stable, hard, non-toxic, transparent, and inexpensive. Due to a high refractive index it is often found in optical applications as a thin film coating. For many purposes it is interesting to take advantage of a combination of good transparency and electrical conductivity. An even larger field of applications would open if the electric conductivity of TiO2 could be increased in a controlled manner. Conventional bulk doping is limited, however, by low solubility limits. Highly conducting nanocrystalline TiO2 thin films have been obtained recently by sputtering in presence of water vapor. The present project intends to elucidate the doping mechanisms at work in such films. In addition, an alternative process to achieve grain-boundary doping of TiO2 was explored. Spectrophotometry over a wide spectral range (0.05 to 5 eV) was the main tool in probing the mobile electrical charge carriers. The interpretation of these optical measurements required appropriate models. The models developed took many structural properties into account, such as thickness, surface roughness, density, anisotropy and crystalline phase composition. The phase and morphology of the films were analyzed by X-ray diffraction and reflection, scanning probe microscopy, and electron microscopy. The chemical analyses included electron-probe microanalyses, Rutherford backscattering and elastic recoil detection analysis. The DC electrical properties were measured between room temperature and 250 °C. Most water-deposited samples showed semiconducting behavior with an activation energy of the order of 100 meV. The optical measurements revealed a broad absorption band around 1 eV. The absorption coefficient scaled with conductivity. It was successfully modelled as a Lorentzian. Similar absorption bands have been reported for reduced rutile and anatase single crystals. Water-deposited samples containing anatase exhibited a metallic behavior. In these samples the thermal activation energy was reduced to about 30 meV and the charge carriers displayed a high mobility (3 cm2V-1s-1). The infrared absorption band was about 10 times less important than in the samples devoid of anatase. Thin films of TiO2 intercalated with the equivalent of nanometer-thick layers of Ti were prepared. By changing the period in the oxygen supply the grain size, and thereby the film properties, could be modified. The films obtained in this way had many properties in common with water-deposited films. They showed the same absorption band in the infrared, had comparable charge carrier densities and were electrically conductive (102 to 104 Sm-1 at room temperature). To our knowledge, this was the first time that such high electrical conductivities were achieved by sputtering in an oxygen plasma.

EPFL2004

Light-Evoked Modulation of Neuronal Activity with Conjugated Polymers

Diego Ghezzi, Mattia Nova

Organic bioelectronics aims at the intimate integration between organic materials and biological tissues in order to obtain a targeted functional outcome. In the last decades, conductive polymers have been successfully employed to interface excitable cells through biocompatible probes and devices. We previously reported the possibility to culture primary neurons on photosensitive conjugated polymers, such as poly(3-hexylthiophene) (P3HT), without altering either the polymer or the neuronal properties. These neurons displayed a depolarizing response to a brief (< 50 ms) green light stimulus and a consequent control over the action potential firing rate. The same interface was also shown to elicit activation of retinal circuitry and ganglion cell firing in explanted degenerate retinas upon light stimulation. However, while neuronal excitation has been extensively proved via planar or protruding electrodes, carbon nanotubes, and conjugated polymers, the hyperpolarization of neurons and silencing of their firing activity has been achieved with optogenetics, but rarely documented for functionalized planar devices and structures. We show here a method to induce both depolarization and hyperpolarization of cells interfaced with conjugated polymers upon prolonged (500 ms) light stimulation. Patch-clamp experiments showed that HEK293 cells grown on P3HT displayed a biphasic response composed of an initial depolarization followed by a sustained hyperpolarization during light illumination. We also documented that the amplitude of the light-induced hyperpolarization was reduced in the absence of intracellular potassium, but was insensitive to changes in the intracellular chloride concentration. A prolonged illumination was equally able to hyperpolarize primary neurons cultured over P3HT and significantly reduced both spontaneous and electrically elicited action potential frequency. We further assessed the translatability of our findings to tissue stimulation by describing the modulation of ganglion cell firing in explanted blind retinas from Royal College of Surgeons rats, a model of Retinitis pigmentosa. By coupling conjugated polymers with multi-electrode arrays and conventional metal electrodes, single-unit activity of ganglion cells was inhibited by prolonged illumination. We similarly investigated the phenomenon in acute hippocampal brain slices placed onto a conjugated polymer thin film. These results indicate that conjugated polymers can be used to non-invasively excite and inhibit the electrical activity of cells cultured on its surface. Furthermore, the translation of our findings from in vitro cultures to different central nervous system tissues, suggests a potential application of these organic devices as a tool for modulation of neuronal activity in vivo.

2015